ALPHA Manuals

This datasheet provides the specifications of AO4900A, including maximum current, maximum voltage, maximum power dissipation, and maximum temperature.

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AO4610 is a N-channel and P-channel complementary enhancement mode field effect transistor produced by Alpha & Omega Semiconductor, Ltd. Its maximum reverse voltage is 30 V, maximum continuous forward current is 3 A, and maximum continuous drain current is 8.5 A.

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AO4615 is a N-channel MOSFET and P-channel MOSFET produced by ON Semiconductor. It has good RDS(ON) and low gate charge characteristics and can be used as a high side switch, as well as other applications.

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The document describes the features and characteristics of the AO4614 model p-channel and n-channel enhancement mode field effect transistors. It uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The product can be used in H-bridge, inverters, and other applications.

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The AO4609 is a complementary enhancement mode field effect transistor that uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. It can be used to form a level shifted high side switch and for a host of other applications.

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The AO4606 is a complementary enhancement mode field effect transistor produced by Alpha&Omega Semiconductor,Ltd. It has excellent RDS(ON) and low gate charge, and can be used for a variety of applications, such as high side switches.

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The document describes the features and characteristics of the AO4604 model, including the use of advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The product can be used in power inverters and other applications.

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AO4704 is an N-Channel enhancement mode field effect transistor with Schottky diode characteristics. It uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity, and body diode characteristics. This device is suitable for use as a synchronous switch in PWM applications. The co-packaged Schottky diode boosts efficiency further.

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AO4709 is a P-channel enhancement mode field effect transistor with Schottky diode from Nexperia. It features excellent R DS(ON) and low gate charge.

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AO4433 is a P-channel enhancement mode field effect transistor from Alpha & Omega Semiconductor, Ltd., with excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating.

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AO4430, AO4430L are N-channel enhancement mode field effect transistors from Alpha & Omega Semiconductor, Ltd. Their maximum voltage is 30V, maximum current is 18A, and ON-resistance is less than 5.5mΩ (VGS = 10V), less than 7.5mΩ (VGS = 4.5V). AO4430L is offered in a lead free package.

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The AO4423 is a P-Channel Enhancement Mode Field Effect Transistor manufactured by Alpha&Omega Semiconductor, Ltd. It has excellent RDS(ON) and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications and it is ESD protected.

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The AO4422 is a N-channel enhancement mode field effect transistor from Alpha & Omega Semiconductor, Ltd. Its maximum drain-source voltage is 30V, and its maximum drain-source current is 11A. Its on-resistance is less than 15mΩ (VGS = 10V) and less than 24mΩ (VGS = 4.5V).

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The AO4420 is a N-channel enhancement mode field effect transistor produced by Alpha & Omega Semiconductor, Ltd., which has good RDS(ON), short circuit immunity and body diode characteristics, and is suitable for use as a synchronous switch in PWM applications.

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The AO4419 is a P-channel enhancement mode field effect transistor with low on-resistance and low gate charge, suitable for load switch or PWM applications.

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The AO4415 is a P-channel enhancement mode field effect transistor from Alpha & Omega Semiconductor, Ltd. Its features are RDS(ON) < 26mΩ (VGS = -20V), RDS(ON) < 35mΩ (VGS = -10V), and it is suitable for use as a load switch or in PWM applications.

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AO4409 is a P-Channel Enhancement Mode Field Effect Transistor produced by Alpha & Omega Semiconductor, Ltd. It has a maximum power dissipation of 3W, a maximum working temperature of 150℃, a maximum working voltage of -30V, and a maximum working current of -15A. AO4409 uses advanced trench technology to provide excellent RDS(ON) and ultra-low low gate charge, making it suitable for use as a load switch or in PWM applications.

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The AO4408 is a N-channel enhancement mode field effect transistor with a maximum drain-source voltage of 30V and a maximum drain current of 12A. Typical on-resistance is 13mΩ (VGS = 10V) and typical on-resistance is 16mΩ (VGS = 4.5V). The AO4408 uses advanced trench technology to provide excellent RDS(ON), low gate charge and fast switching. This device makes an excellent high side switch for notebook CPU core DC-DC conversion. AO4408L(Green Product) is offered in a lead-free package.

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