General Manuals

This document is the datasheet for BZT52-C10 electronic component. BZT52-C10 is produced by ON Semiconductor. It is a silicon planar power zener diode. The zener voltage of BZT52-C10 is 10V with a tolerance of ±5%. The zener diode is packaged in SOD-123.

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BF820, BF822 are NPN silicon epitaxial planar transistors, especially suited for application in class-B video output stages of TV receivers and monitors.

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BCW 31, BCW 32, BCW 33 are NPN surface mount silicon epitaxial planar transistors with a maximum power dissipation of 250 mW. The plastic case is SOT-23 and the weight is approximately 0.01 g. The standard packaging is reeled.

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US1A THRU US1J SURFACE MOUNT ULTRAFAST EFFICIENT RECTIFIER is a surface mount ultrafast efficient rectifier product from ON Semiconductor. It has an rated reverse voltage of 50 to 600 volts and an rated forward current of 1.0 ampere. The product features plastic package, low power loss, high efficiency, high temperature soldering etc.

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This document introduces the features and characteristics of the UF5400-UF5408 series ultrafast efficient plastic rectifier products, including reverse voltage, forward current, reverse recovery time, forward voltage, leakage, surge capability, and high temperature soldering.

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RGP10A THRU RGP10M Glass passivated junction fast switching rectifier. Reverse voltage is 50 to 1000 volts, and forward current is 1.0 amps.

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The LCE6.5 to LCE28A series is a low capacitance TransZorb™ transient voltage suppressor. Its features include: plastic package with UL 94V-0 flammability classification, glass passivated junction, 1500W peak pulse power capability, excellent clamping capability, low incremental surge resistance, fast response time, ideal for data line applications, etc.

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RGP25A to RGP25M are glass passivated junction fast switching rectifiers with a reverse voltage range of 50 to 1000 volts and a forward current of 2.5 amperes. The product features high temperature metallurgically bonded construction, glass passivated cavity-free junction, 2.5 ampere operation with no thermal runaway, typical reverse current less than 0.2µA, and fast switching for high efficiency.

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The BZX79 series of silicon planar Zener diodes is characterized by Zener voltages graded according to the international E24 standard, and available in tolerance series of ±2%, ±3% and ±5%. Higher Zener voltages and 1% tolerance are available on request.

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The document describes the features and characteristics of the 9/28/00, silicon planar power zener diodes, including the Zener voltage grading according to the international E 24 standard, standard Zener voltage tolerance, other case styles and configurations, and maximum ratings and thermal characteristics.

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P6KA6.8 THRU P6KA43A Automotive Transient Voltage Suppressors, rated breakdown voltage from 6.8 to 43 volts, maximum pulse power of 600 watts. The product has high temperature resistance, fast response, low impedance and other characteristics, suitable for various applications in automobiles.

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EMD30 is a dual digital switch launched by ROHM. It has the characteristics of high withstand voltage, low resistance and low power consumption. It can be widely used in DC/DC converters and motor drivers.

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EMD38 is a digital transistor launched by ROHM. It adopts the EMT6 package and integrates DTr1, DTr2, two independent NPN and PNP transistors. It can be applied to driver circuits.

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EMD5/UMD5N is a dual digital transistor launched by ROHM. The transistor integrates DTA143X chip and DTC144E chip. It can be installed on EMT3 or UMT3 automatic mounting machine.

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QSZ3 is a double-tube transistor produced by ROHM. It integrates 2SB1705 and 2SD2670 two transistors, and its package form is TSMT5, which has the characteristics of low VCE(sat) and small package.

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MMBTA70 is a Kexin SOT-23 package NPN general purpose transistor. Its maximum collector-emitter voltage is -40V, maximum emitter-base voltage is -4V and maximum collector current is -100mA.

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