Microsemi Manuals

Microsemi 2N1794-1804; 2N4371-4377 handbook

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Microsemi TVS305-TVS430 Data Sheet

File format: PDF Size:126 KB

Microsemi 1N6036 Data Sheet

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Microsemi S/R36 Series Data Sheet

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Microsemi 681 689 Series Data Sheet

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Microsemi FLIP CHIP TVS DIODES CHF5KP5.0 thru CHF5KP110CA Patented Flip Chip Series Data Sheet

This document introduces the features of CHF5KP5.0 thru CHF5KP110CA series, including maximum ratings, mechanical properties, electrical properties, etc.

File format: PDF Size:254 KB

Microsemi 1N3016B thru 1N3051B Data Sheet1

This datasheet provides detailed information about 1N3016B to 1N3051B Zener diodes, including zener voltage range, package type, applications, etc.

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Microsemi 1N6103-1N6137 1N6139-1N6173 1N6103A-1N6173A 1N6139A-1N6173A

1n6103 is a double-sided Schottky diode, its main features include: low reverse voltage (vrr), low leakage current (id), high breakdown voltage (vb), high reverse recovery time (trr), low junction capacitance (cj) and high switching speed. 1n6103 can be used for various applications, including but not limited to switching power supplies, pulse power supplies, power electronics equipment, automotive electronics equipment and lighting applications.

File format: PDF Size:110 KB

Microsemi 1N5415US thru 1N5420US

This document introduces a series of fast recovery glass rectifier products that are hermetically sealed with voidless-glass construction. They are ideal for high-reliability applications where a failure cannot be tolerated. These products have a rated current of 3.0 amps and working peak reverse voltages from 50 to 600 volts. They feature an internal 'Category I' metallurgical bond and are sealed with voidless-glass construction. In addition, other rectifier products with different current ratings and recovery time requirements are also available.

File format: PDF Size:325 KB

Microsemi APTDF400KK100G handbook

This document describes the absolute maximum ratings, applications, features, and electrical characteristics of the APTDF400KK100G product.

File format: PDF Size:217 KB

Microsemi 1N4614 thru 1N4627 Manual

1n4614-1 thru 1n4627-1 is available in jan, jantx, jantxv and jans per mil-prf-19500/435, features low current operation (250 µa), low reverse leakage and low noise characteristics, double plug construction and metallurgically bonded

File format: PDF Size:118 KB

Microsemi 1N5333B thru 1N5388B Data Sheet1

This document describes the features and characteristics of the Silicon 5 Watt Zener Diodes produced by Microsemi Scottsdale Division, including the voltage regulation range, tolerances, moisture classification, etc.

File format: PDF Size:206 KB

Microsemi 1N821 thru 1N829A-1 DO-7 Data Sheet1

The document describes the features and characteristics of the 1N821 to 1N829A-1 series temperature-compensated Zener reference diodes manufactured by Microsemi. These reference diodes provide a selection of both 6.2V and 6.55V nominal voltages and temperature coefficients as low as 0.0005%/oC for minimal voltage change with temperature when operated at 7.5mA. These reference diodes are suitable for military and other applications and offer various military and radiation-hardened options.

File format: PDF Size:222 KB

Microsemi CDLL5518 Data Sheet

The document provides design data and characteristics of Microsemi's diodes models CDLL5518B to CDLL5523B.

File format: PDF Size:112 KB

microsemi FLIP-CHIP TVS DIODES CHFP6KE5.0 thru CHFP6KE170CA Patented Flip-Chip Series

This document describes a flip-chip resistor called CHFP6KE, which has bidirectional and unidirectional characteristics. It is a glass-encapsulated resistor that eliminates wire bonding and has a maximum peak pulse power of 600 watts and a maximum continuous power dissipation of 2.5 watts. The product features non-inductive insertion and no voltage overshoot.

File format: PDF Size:155 KB

Microsemi 1N4099 Data sheet

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Microsemi SMCG5629 thru SMCG5665A SMCJ5629 thru SMCJ5665A

This document describes the features and characteristics of Transient Voltage Suppressors (TVSs). They are used for protecting sensitive components requiring low clamping voltage levels. They can handle high current impulses typically generated by inductive switching transients. Additionally, they have a low-flat profile, providing easier insertion or automatic handling benefits compared to other MELF style packages.

File format: PDF Size:413 KB

Microsemi TECHNICAL DATA NPN SILICON MEDIUM POWER TRANSISTOR 2N1483 2N1484 2N1485 2N1486

2N1483, 2N1484, 2N1485, 2N1486 are a series of NPN silicon medium power transistors with a rated collector-emitter voltage of 40V, collector-emitter breakdown voltage of 55V, collector-base voltage of 60V, emitter-base voltage of 12V, collector current of 3.0A, and total power dissipation of 1.75W and 25W.

File format: PDF Size:58 KB

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