INFINEON Manuals

The product is a power transistor with a rated voltage of 600V, a conduction resistance of 0.07 ohms and a maximum current of 47A. The product has ultra-low gate charge, ultra-low effective capacitance, ultra-high current carrying capacity, ultra-high dv/dt, periodic avalanche rating and improved transconductance characteristics.

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SPW47N60C3 is a Cool MOS™ Power Transistor with a rated junction temperature of 650V, RDS(on) 0.07 Ohm, ID 47 A. Product features include: new revolutionary high voltage technology, world's best RDS(on) in TO 247, ultra low gate charge, periodic avalanche rating, extreme dv/dt rating, ultra low effective capacitances.

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This document describes the features and characteristics of the SPW47N60C2 Cool MOS™ Power Transistor, including high voltage technology, low RDS(on), low gate charge, improved noise immunity, etc.

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SPW47N60C2 is a power transistor from Dinghao brand. Its features are new revolutionary high voltage technology, best RDS(on) in TO 247, ultra low gate charge, periodic avalanche rated, extreme dv/dt rated, ultra low effective capacitances and improved noise immunity.

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The SPW35N60CFD CoolMOSTM power transistor features new revolutionary high voltage technology, intrinsic fast-recovery body diode, extremely low reverse recovery charge, ultra low gate charge, extreme dv/dt rating, high peak current capability, periodic avalanche rating, etc.

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This product is a high voltage power transistor, with ultra low gate charge, periodic avalanche rating, extreme dv/dt rating, ultra low effective capacitance and improved transconductance

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This datasheet records the technical characteristics of the SPW32N50C3 product, including rated current, maximum voltage, maximum current, gate source voltage, switching frequency, operating temperature and other parameters.

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This document describes the features and characteristics of the SPW32N50C3 Cool MOS™ power transistor, including new revolutionary high voltage technology, ultra low gate charge, periodic avalanche rating, extreme dv/dt rating, ultra low effective capacitances, and improved transconductance.

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SPW24N60C3 is a CoolMOSTM power transistor with revolutionary high voltage technology, ultra low gate charge, periodic avalanche rating, extreme dv /dt rating, ultra low effective capacitances and improved transconductance.

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This document describes the features and characteristics of the SPW24N60C3 CoolMOSTM power transistor, including new revolutionary high voltage technology, ultra low gate charge, periodic avalanche rated, extreme dv / dt rated, ultra low effective capacitances, improved transconductance.

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SPW21N50C3 is a power switch transistor launched by Toshiba, using TO247 package, its maximum voltage is 560V, current is 21A.

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This document describes the features and characteristics of the SPW20N60S5 Cool MOS™ power transistor, including new high voltage technology, ultra low gate charge, periodic avalanche rating, extreme dv/dt rating, ultra low effective capacitances, and improved transconductance.

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The SPW20N60S5 is a high-voltage power transistor with a maximum voltage of 600 volts, a minimum resistance of 0.19 ohms, and a maximum current of 20 amperes. The transistor features new revolutionary high-voltage technology, ultra-low gate charge, periodic avalanche rating, extreme dv/dt rating, ultra-low effective capacitances, and improved transconductance.

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SPW20N60CFD is a power transistor from Dinghao. Its maximum voltage is 650V and rated current is 20.7A. The transistor has ultra low gate charge, extreme low reverse recovery charge, high peak current capability, intrinsic fast-recovery body diode etc.

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SPW20N60CFD is a high voltage power transistor from Dinghao. Its features include low gate charge, extreme dv/dt and extremely low reverse recovery charge.

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SPW20N60C3 is a power transistor of Dinghao brand, its features are new revolutionary high voltage technology, ultra low gate charge, periodic avalanche rated, extreme dv/dt rated, high peak current capability, improved transconductance.

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SPW20N60C3 is a high voltage power transistor from Dinghao. Its maximum voltage is 650V, rated current is 20.7A, and it has the features of ultra-low gate charge, periodic avalanche rating, extreme dv/dt rating, high peak current capability and improved transconductance.

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The TLE 6285 is a single-wire transceiver with a LDO. It is chip by chip integrated circuit in a P-DSO-16-4 package. It works as an interface between the protocol controller and the physical bus. The TLE 6285 is especially suitable to drive the bus line in LIN systems in automotive and industrial applications. Furthermore, it can be used in standard ISO9141 systems. In order to reduce the current consumption the TLE 6285 offers a sleep operation mode. In this mode a voltage regulator can be controlled in order to minimize the current consumption of the whole application (VR in sleep mode <1µA!). The on-chip voltage regulator (VR) is designed for this application but it is also possible to use an external voltage regulator.

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This datasheet provides detailed information on the TLE6284G driver IC, including features, characteristics, and applications.

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