NEC 2SK3296 N-Channel Power MOS FET Datasheet

Data sheet for NEC 2SK3296 N‑Channel Power MOSFET with specs, ratings and package options.


NEC 2SK3296 N-Channel Power MOS FET Datasheet - cover page
Brand
NEC
Category
Power Amplifier
Document type
Datasheet
Language
English
Pages
8
File format
PDF
File size
422 KB
Published
28 September, 2026
Updated
28 September, 2026
Model
2SK3296
MD5 checksum
1D804C1BCE8B2E991A427BC1C5379549

About this manual

The NEC 2SK3296 is an N‑Channel power MOSFET designed for low‑voltage, high‑current applications such as DC‑DC converters with synchronous rectifiers. It offers a low on‑state resistance, low gate charge and built‑in gate protection diode.

The document provides absolute maximum ratings, electrical characteristics, typical performance curves, and mechanical dimensions for several package types (TO‑220AB, TO‑262, TO‑263). Ordering information and legal notices are also included.

What's inside

  • Description
  • Features
  • Absolute Maximum Ratings
  • Ordering Information
  • Electrical Characteristics
  • Typical Characteristics
  • Package Drawings
  • Memo
  • Legal Disclaimer

Specifications

Drain‑to‑Source Voltage (VDS) Max20 V
Gate‑to‑Source Voltage (VGS) Max±20 V
Drain Current (DC) Max±35 A
Available PackagesTO‑220AB, TO‑262, TO‑263 (ZK, ZJ)

Frequently asked questions

What is the maximum drain current rating?

The datasheet lists a maximum DC drain current of ±35 A.

Which package types are available for the 2SK3296?

Available packages include TO‑220AB, TO‑262, and TO‑263 (ZK and ZJ).

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