ON Semiconductor 1N5820 1N5821 1N5822 Manual

Update: 30 September, 2023

1N5820, 1N5821, 1N5822 These three models of Schottky diodes use the Schottky barrier principle in a large area of metal-to-silicon power diodes. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes, and polarity protection diodes.

File format: PDF

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MD5 Checksum: EA721EF07748BC9E2909C8E94B16CC99

Publication date: 08 May, 2012

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PDF Link: ON Semiconductor 1N5820 1N5821 1N5822 Manual PDF

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