Update: 28 September, 2023
This document introduces a self-protected field-effect transistor (FET) product with temperature and current limit features. The product utilizes ON Semiconductor's latest MOSFET technology process to achieve the lowest possible on-resistance per silicon area while incorporating smart features. Integrated thermal and current limits work together to provide short circuit protection. The product also features an integrated drain-to-gate clamp that enables it to withstand high energy in the avalanche mode and provides additional safety margin against unexpected voltage transients. Electrostatic discharge (ESD) protection is provided by an integrated gate-to-source clamp.
File format: PDF
Size: -
MD5 Checksum: 5CE424740DC2E0815FDAB479F93A848E
Publication date: 11 April, 2012
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PDF Link: ON SEMICONDUCTOR NIF5002N Self Protected FET with Temperature Current Limit Manual PDF