ST Manuals

The document describes the features and characteristics of the M74HC133 high-speed CMOS 13-input NAND gate. It features high speed, low power dissipation, high noise immunity, symmetrical output impedance, balanced propagation delays, and a wide operating voltage range.

M74HC132 is a CMOS QUAD 2-input SCHMITT NAND GATE with high speed, low power dissipation, high noise immunity, symmetrical output impedance, balanced propagation delays and wide operating voltage range.

This document describes the features and characteristics of the M74HC125, a high-speed CMOS quad buffer, including high-speed transmission, low power dissipation, high noise immunity, symmetrical output impedance, balanced propagation delays, and wide operating voltage range.

M74HC123 is a high speed CMOS MONOSTABLE MULTIVIBRATOR fabricated with silicon gate C2MOS technology.

M74HC109 is a high speed CMOS dual J-K flip-flop with preset and clear, fabricated with silicon gate C2MOS technology. In accordance with the logic level on the J and K input this device changes state on positive going transition of the clock pulse. CLEAR and PRESET are independent of the clock and are accomplished by a logic low on the corresponding input. All inputs are equipped with protection circuits against static discharge and transient excess voltage.

The document describes the features and characteristics of the M74HC107 model, including high speed, low power consumption, high noise immunity, and symmetrical output impedance.

The M74HC10 is a high speed CMOS TRIPLE 3-INPUT NAND GATE fabricated with silicon gate C2MOS technology.

The M74HC08 is a high speed CMOS QUAD 2-input AND gate fabricated with silicon gate C2MOS technology. The internal circuit is composed of 2 stages including buffer output, which enables high noise immunity and stable output. All inputs are equipped with protection circuits against static discharge and transient excess voltage.

M74HC04 is a high speed CMOS hex inverter fabricated with silicon gate C2MOS technology. The internal circuit is composed of 3 stages including buffer output, which enables high noise immunity and stable output. All inputs are equipped with protection circuits against static discharge and transient excess voltage.

The M74HC03 is an high speed CMOS QUAD 2-INPUT OPEN DRAIN NAND GATE fabricated with silicon gate C2MOS technology. The internal circuit is composed of 3 stages including buffer output, which enables high noise immunity and stable output. This device can, with an external pull-up resistor, be used in wired AND configuration. This device can be also used as a led driver and in any other application requiring a current sink. All inputs are equipped with protection circuits against static discharge and transient excess voltage.

The M74HC02 is a high speed CMOS QUAD 2-INPUT NOR GATE fabricated with silicon gate C2MOS technology. The internal circuit is composed of 3 stages including buffer output, which enables high noise immunity and stable output. All inputs are equipped with protection circuits against static discharge and transient excess voltage.

M74HC00 is a high speed CMOS QUAD 2-INPUT NAND GATE fabricated with silicon gate C2MOS technology. The internal circuit is composed of 3 stages including buffer output, which enables high noise immunity and stable output. All inputs are equipped with protection circuits against static discharge and transient excess voltage.

The L6671 is a complete rotational accelerometer system based on a Σ∆ architecture, followed by a digital downsampling block and a digital filter, featur- ing high sensitivity, 800 Hz signal bandwidth and a complete serial port interface for a direct connection to microprocessor environment. An embedded PLL allows internal clock generation from an external syn- chronization signal.

This document provides preliminary information on a new product that is currently in development or undergoing evaluation. Details may change. The product features multipower BCD technology, load-dependent current-mode control, on-board high-voltage start-up, improved standby function, and low quiescent current, among others.

This document describes a piezoelectric actuator driver using mixed technology in a 90V BCD SO24 plastic SMD package. It features a selectable output voltage range, output slew rate control, and self-current limiting for low EMI. It also has multiple driving modes and dual operational amplifiers capable of driving loads from 0.4nF up to 24nF. Additionally, it includes analog voltage shifting circuitry, an internal 2.5V voltage reference, and power-saving sleep mode.