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The document describes the features and characteristics of the 74V1G14 SINGLE SCHMITT INVERTER, including high speed, low power dissipation, typical hysteresis, power down protection on inputs, symmetrical output impedance, balanced propagation delays, etc.
The document describes the features and characteristics of the 74V1G126 SINGLE BUS BUFFER (3-STATE), including high speed, low power dissipation, high noise immunity, powerdown protection on inputs, symmetrical output impedance, balanced propagation delays, etc.
The 74V1G125 is a high-speed CMOS SINGLE BUS BUFFER with features including high speed, low power dissipation, high noise immunity, powerdown protection on inputs, symmetrical output impedance, and balanced propagation delays. It can be used to interface 5V to 3V.
The 74V1G08 is an advanced high-speed CMOS SINGLE 2-INPUT AND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology.
The 74V1G05 is a single-unit inverter from Philips Corporation, manufactured with sub-micron silicon gate and double-layer metal wiring C2MOS technology. It has the characteristics of high speed, low power consumption, high noise immunity and stable output. The device can be used for interface between 5V and 3V.
The 74V1G04 is an advanced high-speed CMOS SINGLE INVERTER fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. The internal circuit is composed of 3 stages including buffer output, which provide high noise immunity and stable output. Power down protection is provided on all inputs and 0 to 7V can be accepted on inputs with no regard to the supply voltage. This device can be used to interface 5V to 3V.
The 74V1G03 is an advanced high-speed CMOS SINGLE 2-INPUT OPEN DRAIN NAND GATE fabricated with sub-micron silicon gate double-layer metal wiring C2MOS technology. The internal circuit is composed of 3 stages including buffer output, which provide high noise immunity and stable output. This device can, with an external pull-up resistor, be used in wired AND configuration. This device can also be used as a led driver in any other application requiring a current sink. Power down protection is provided on all inputs and 0 to 7V can be accepted on inputs with no regard to the supply voltage. This device can be used to interface 5V to 3V.
The 74V1G02 is an advanced high-speed CMOS SINGLE 2-INPUT NOR GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. The internal circuit is composed of 3 stages including buffer output, which provide high noise immunity and stable output. Power down protection is provided on all inputs and 0 to 7V can be accepted on inputs with no regard to the supply voltage. This device can be used to interface 5V to 3V.
74V1G00 is an advanced high-speed CMOS SINGLE 2-INPUT NAND GATE with sub-micron silicon gate and double-layer metal wiring C2MOS technology, it provides high noise immunity and stable output. It provides power down protection on all inputs and 0 to 7V can be accepted on inputs with no regard to the supply voltage. This device can be used to interface 5V to 3V.
ST1335D, ST1336D ST1355D 5-Contact Memory Card IC 272-bit EEPROM With Advanced Security Mechanisms and Inlock System is a 272-bit EEPROM device specially designed for prepaid Phonecard applications, with associated security logic and special fuses to control memory access.
This document describes the features and characteristics of the ST19WL34 smartcard MCU, including enhanced 8-bit CPU, extended addressing modes, user ROM, user RAM, user EEPROM, security firewalls, high security features, etc.
ST19WR02 is a dual contactless smartcard MCU based on ISO 14443 type B with 2 Kbytes EEPROM, integrated with security firewall, DES accelerator, 2 8-bit timers, ISO 3309 CRC calculation block, FIPS 140-2 compliant random number generator, powered by 2.7 V to 5.5 V, external clock frequency up to 10 MHz
