ST Manuals

This document describes the 74V1T80 high-speed CMOS positive edge triggered D-type flip-flop with inverted output. The product features high speed, low power dissipation, compatibility with TTL outputs, etc., making it suitable for portable applications.

The document describes a high-speed CMOS single positive edge triggered D-type flip-flop. The flip-flop is fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology and is designed to operate from 4.5V to 5.5V. It features high speed, low power dissipation, compatibility with TTL outputs, and can be used to interface 5V to 3V systems.

The document describes the features and characteristics of a high-speed CMOS single D-type latch, including high-speed transmission rate, low power dissipation, compatibility with TTL outputs, etc. The product is designed to operate from 4.5V to 5.5V, making it ideal for portable applications.

74V1T70 is an advanced high-speed CMOS SINGLE BUFFER fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. The internal circuit is composed of 2 stages including buffer output, which provide high noise immunity and stable output. Power down protection is provided on input and 0 to 7V can be accepted on input with no regard to the supply voltage. This device can be used to interface 5V to 3V.

74V1T66 is a single bilateral switch fabricated in silicon gate C2MOS technology, which features high speed and low power consumption, and can convert signals within the power supply range.

74V1T384 is a high-performance CMOS single high-speed bus switch fabricated in silicon gate C2MOS technology.

74V1T32 is a single 2-input OR gate chip in the 74 series. It is fabricated using sub-micron silicon gate and double-layer metal wiring C2MOS technology. It provides high noise immunity and stable output. The voltage range is 0-7V, which can be used for 5V to 3V level interfaces.

This document describes the features and characteristics of the 74V1T14 single Schmitt inverter, including high speed, low power dissipation, typical hysteresis, power down protection on input, symmetrical output impedance, etc.

The 74V1T126 is an advanced high-speed CMOS SINGLE BUS BUFFER with features such as low power dissipation and compatibility with TTL outputs.

The 74V1T125 is an advanced high-speed CMOS SINGLE BUS BUFFER fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology.

74V1T08 is a high-performance CMOS single 2-input AND gate with high integration, high speed, low power consumption, and good anti-interference ability. It can be used for 5V to 3V voltage interface

The 74V1T07 is a CMOS logic gate with high speed, low power consumption, TTL output compatibility, power down protection, wide supply voltage range and improved latch-up immunity

The 74V1T05 is an advanced high-speed CMOS SINGLE INVERTER (OPEN DRAIN) fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology.

The 74V1T04 is a high-speed CMOS single inverter with features such as high speed, low power dissipation, and compatibility with TTL outputs.

This document describes the features and characteristics of the 74V1T03 single 2-input open drain NAND gate. The product offers high speed, low power dissipation, compatibility with TTL outputs, power down protection on inputs, and a wide operating voltage range.