ST Manuals

The 74V2G384 is an advanced high-speed CMOS DUAL HIGH SPEED BUS SWITCH fabricated in silicon gate C2MOS technology. It's designed to operate from 3V to 5.5V, making this device ideal for portable applications. It's offers 7Ω Resistance typical value at VCC=4.5V. Additional key feature are fast switching speed (tON=3.8ns, tOFF=3.3ns Typical) and Low Power Consumption.

74V2G32 is a high-performance dual 2-input or gate in the 74 series with high noise immunity, low power consumption and high speed characteristics.

The document describes the features and characteristics of the 74V2G241, an advanced high-speed CMOS dual bus buffer non-inverter. It includes high-speed transmission, low power consumption, high noise immunity, and input/output protection. This product is suitable for interfacing 5V to 3V systems and is ideal for portable applications.

This document describes the features and characteristics of the 74V2G14, a high-speed CMOS triple Schmitt trigger inverter. It features high speed, low power dissipation, hysteresis, and power down protection on inputs and outputs. The product is suitable for interfacing 5V to 3V systems and is ideal for portable applications such as personal digital assistants, camcorders, and battery-powered equipment.

74V2G132 is a high-speed CMOS dual 2-input NAND gate fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. Pin configuration and function are the same as those of the 74V2G00 but the 74V2G132 has hysteresis. The internal circuit is composed of 3 stages including buffer output, which provide high noise immunity and stable output. Power down protection is provided on all inputs and 0 to 7V can be accepted on inputs with no regard to the supply voltage. This device can be used to interface 5V to 3V.

74V2G126 is a dual bus buffer with high speed, low power consumption, high noise immunity, power down protection and balanced propagation delay

The 74V2G08 is an advanced high-speed CMOS DUAL 2-INPUT AND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. The internal circuit is composed of 2 stages including buffer output, which provide high noise immunity and stable output. Power down protection is provided on all inputs and 0 to 7V can be accepted on inputs with no regard to the supply voltage. This device can be used to interface 5V to 3V.

The 74V2G07 is a high performance CMOS triple buffer with low power consumption, high noise immunity and stable output.

This document describes the features and characteristics of the 74V2G05 triple inverter (open drain), including high speed, low power dissipation, high noise immunity, and power down protection.

74V2G03 is an advanced high-speed CMOS DUAL 2-INPUT OPEN DRAIN NAND GATE fabricated with sub-micron silicon gate double-layer metal wiring C2MOS technology. The internal circuit is composed of 3 stages including buffer output, which provide high noise immunity and stable output. The device can, with an external pull-up resistor, be used in wired AND configuration. This device can also be used as a led driver in any other application requiring current sink. Power down protection is provided on all inputs and 0 to 7V can be accepted on inputs with no regard to the supply voltage. This device can be used to interface 5V to 3V.

The 74V2G02 is a dual 2-input NOR gate from the 74 series, which is fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. It features high speed, low power dissipation, high noise immunity and wide input voltage range. It can be used to implement logic operations.

The 74V2G00 is a high-speed CMOS DUAL 2-INPUT NAND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. The internal circuit is composed of 3 stages including buffer output, which provide high noise immunity and stable output. Power down protection is provided on all inputs and outputs and 0 to 7V can be accepted on inputs with no regard to the supply voltage. This device can be used to interface 5V to 3V.

The 74V1T86 is an advanced high-speed CMOS SINGLE EXCLUSIVE OR GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology, which has low power dissipation, high speed, wide input voltage range, wide output voltage swing, large output current and strong input and output anti-interference ability, and can be used between 5V and 3V interface.