Fairchild Manuals

The RUR1S1560S is a fast recovery 15A, 600V Ultrafast Diode with soft recovery characteristics. It has a low forward voltage drop and is of silicon nitride passivated ion-implanted, epitaxial planar construction. This device is intended for use as freewheeling/clamping diode and rectifier in a variety of switching power supplies and other power switching applications.

This document describes the features and characteristics of the RS1A - RS1M series fast rectifiers produced by Fairchild Semiconductor Corporation, including glass passivated junction, suitable for surface mounted applications, built-in strain relief for automated placement, and UL certified. The document also lists the absolute maximum ratings of this series of products, including maximum repetitive reverse voltage, average rectified forward current, non-repetitive peak forward surge current, storage temperature range, and operating junction temperature. In addition, the document provides electrical performance parameters of this series of products, such as power dissipation, thermal resistance, forward voltage, reverse recovery time, reverse current, and total capacitance.

The RHRP3060 is a hyperfast diode with soft recovery characteristics (trr < 40ns). They have half the recovery time of ultrafast diodes and are of silicon nitride passivated ion-implanted epitaxial planar construction. These devices are intended for use as freewheeling/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistors.

The RHRP30120 30A, 1200V Hyperfast Diode is a hyperfast diode with soft recovery characteristics (trr < 65ns).It has half the recovery time of ultrafast diodes and is of silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as a freewheeling/clamping diode and rectifier in a variety of high frequency switching power supplies and other power switching applications. Its low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits, reducing power loss in the switching transistors.

RHRP1540, RHRP1560 are hyperfast diodes with soft recovery characteristics produced by Fairchild Semiconductor Corporation. It has half the recovery time of ultrafast diodes and is silicon nitride passivated ion-implanted epitaxial planar construction. Its low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.

The RHRP15120 is a hyperfast diode with soft recovery characteristics (trr < 65ns) from Fairchild Semiconductor Corporation. It has half the recovery time of ultrafast diodes and is of silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as a freewheeling/clamping diode and rectifier in a variety of switching power supplies and other power switching applications. Its low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistors. Formerly developmental type TA49098.

RHRG75120 is a hyperfast soft recovery diode manufactured by Fairchild Semiconductor Corporation. It features a short recovery time than ultrafast diodes and is suitable for use in a variety of high frequency switching power supplies and other power switching applications.

The RHRG5060 is a hyperfast diode with soft recovery characteristics (trr < 45ns). It has half the recovery time of ultrafast diodes and is of silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as a freewheeling/clamping diode and rectifier in a variety of switching power supplies and other power switching applications. Its low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistors. Formerly developmental type TA49065.

RHRG3040CC and RHRG3060CC are hyperfast diodes with soft recovery characteristics (trr < 40ns). They have half the recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction. These devices are intended for use as freewheeling/ clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistors. Formerly developmental type TA49063.

RHRG3040 and RHRG3060 are hyperfast diodes with soft recovery characteristics (trr<40ns)

This document describes the absolute maximum ratings, features, and electrical characteristics of the RGP10A-RGP10M series fast rectifiers, including 1.0 ampere operation, high temperature metallurgically bonded construction, glass passivated cavity-free junction, etc.

This document describes the absolute maximum ratings, electrical characteristics, and thermal characteristics of RGF1A-RGF1M fast rectifiers. The product features include glass passivated junction, suitable for surface mounted application, low forward voltage drop, high current capability, easy pick and place, high surge current capability, etc.

The ISL9R860PF2 is a Stealth™ diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current (IRRM) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRRM and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the Stealth™ diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost. Formerly developmental type TA49409.

ISL9R860P2,ISL9R860S3ST is a 8A, 600V Stealth™ diode optimized for low loss performance in high frequency hard switched applications.