Fairchild Manuals

This document provides the absolute maximum ratings and thermal characteristics of the MMBD1200 series small signal diodes. It includes the markings, maximum repetitive reverse voltage, average rectified forward current, non-repetitive peak forward surge current, storage temperature range, and operating junction temperature for each model. Additionally, the document lists the electrical characteristics of each model, such as breakdown voltage, forward voltage, reverse current, and total capacitance.

This document provides the absolute maximum ratings, thermal characteristics, and electrical characteristics of the BAV70 / 74 small signal diode. It includes parameters such as maximum repetitive reverse voltage, average rectified forward current, non-repetitive peak forward surge current, storage temperature range, etc. Additionally, the document presents the breakdown voltage, forward voltage, reverse leakage, total capacitance, and reverse recovery time of the product.

1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Small Signal Diode

This document is the absolute maximum ratings datasheet for the 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 small signal diodes.

MMBD2838 is a small signal diode.

The 1N4454 is a high-conductance ultra-fast diode from Fairchild Semiconductor Corporation. Its working temperature range is -65 ° C to +200 ° C, the peak forward current is 4.0 A, the maximum reverse current is 100 nA, and the maximum power consumption is 500 mW.

1N486B is a small signal diode produced by Fairchild Semiconductor Corporation. Its maximum reverse voltage is 250V, average rectified forward current is 200mA, non-repetitive peak forward surge current is 1.0A or 4.0A, and storage temperature range is -65 to 200℃. The operating junction temperature is 175℃.

MMBD4148/SE/CC/CA is a small signal diode produced by Fairchild Semiconductor Corporation

BAY72 small signal diode datasheet

BAV99 is a small signal diode produced by Fairchild Semiconductor. Its maximum reverse voltage is 70V, average rectified forward current is 200mA, non-repetitive peak forward surge current is 1.0A or 2.0A, storage temperature range is -55 to +150°C, and operating junction temperature is 150°C.

This document describes the absolute maximum ratings and electrical characteristics of the KSC2669 NPN epitaxial silicon transistor. The transistor features high current gain bandwidth product and low saturation voltage.

The document describes a parametric measurement unit with functions to measure voltage and current. It has a voltage range of -5V to +15V, four programmable current ranges, high resolution, and high accuracy.

The FAN5601 is a regulated step-down charge pump DC/DC converter with features including > 85% peak efficiency, low EMI, low ripple, output voltage range of 1.3V/1.8V, input voltage range of 2.2V to 5.5V, output current up to 250mA, ±2.5% output voltage accuracy, 30µA operating current, Icc < 1µA in shutdown mode, 2MHz operating frequency, short circuit and over temperature protection, etc.

The MOC3051-M and MOC3052-M consist of a AlGaAs infrared emitting diode optically coupled to a non-zero-crossing silicon bilateral AC switch (triac). These devices isolate low voltage logic from 115 and 240 Vac lines to provide random phase control of high current triacs or thyristors. These devices feature greatly enhanced static dv/dt capability to ensure stable switching perfor- mance of inductive loads.