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This document describes the features and characteristics of the S1A-S1M series general purpose rectifiers, including low profile package and glass passivated junction.
The MUR840, MUR860, RURP840, and RURP860 are low forward voltage drop ultrafast recovery rectifiers (trr < 60ns). They use a glass-passivated ion-implanted, epitaxial construction. These devices are intended for use as output rectifiers and flywheel diodes in a variety of high-frequency pulse-width modulated switching regulators. Their low stored charge and attendant fast reverse-recovery behavior minimize electrical noise generation and in many circuits markedly reduce the turn-on dissipation of the associated power switching transistors.
RURP3060 is an ultrafast diode produced by Fairchild Semiconductor Corporation. It features soft recovery characteristics with a turn-on time of less than 55ns. Its rated operating temperature is 175°C and its reverse voltage is 600V. It is widely used in various switching power supplies and other power switching applications.
The RURG8060 is an ultrafast diode with soft recovery characteristics (trr < 75ns) and low forward voltage drop. It is made with silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as a freewheeling/clamping diode and rectifier in a variety of switching power supplies and other power switching applications. Its low stored charge and ultrafast recovery with soft recovery characteristic minimize ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistors. Formerly developmental type TA09886.
The RURG80100 is a fast recovery diode produced by Fairchild Semiconductor Corporation with an 80A rating and a reverse voltage of 1000V. This diode has a low forward voltage drop and a silicon nitride passivated ion-implanted epitaxial planar structure.
RURG3040CC and RURG3060CC are ultrafast dual diodes with soft recovery characteristics (trr < 55ns). They have low forward voltage drop and are silicon nitride passivated ion-implanted epitaxial planar construction. These devices are intended for use as freewheeling/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and ultrafast recovery with soft recovery characteristics minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.
RURG3060 is a fast recovery diode from Fairchild Semiconductor Corporation. The product has low voltage drop, soft recovery characteristics, and is suitable for a variety of switching power supplies and other power switching applications.
The RURG3020CC is an ultrafast dual diode with soft recovery characteristics. It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as a freewheeling/clamping diode and rectifier in a variety of switching power supplies and other power switching applications. Its low stored charge and ultrafast recovery with soft recovery characteristics minimizes ringing and electrical noise in many power switching circuits, reducing power loss in the switching transistors. Formerly developmental type TA09645.
RURG1520CC is an ultrafast dual diode with soft recovery characteristics (trr<30ns). It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as a freewheeling/clamping diode and rectifier in a variety of switching power supplies and other power switching applications. Its low stored charge and ultrafast recovery with soft recovery characteristic minimizes ringing and electrical noise in many power switching circuits, reducing power loss in the switching transistors.
RURD660, RURD660S 6A, 600V Ultrafast Diodes are ultrafast diodes with soft recovery characteristics (trr < 55ns) from Fairchild Semiconductor Corporation. They have low forward voltage drop and are silicon nitride passivated ion-implanted epitaxial planar construction. These devices are intended for use as freewheeling/ clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and ultrafast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.
RURD620CCS9A_F085 6A, 200V Ultrafast Dual Diodes are ultrafast dual diodes with soft recovery characteristics (trr < 25ns). They have low forward voltage drop and are silicon nitride passivated ion-implanted epitaxial planar construction. These devices are intended for use as freewheeling/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and ultrafast soft recovery minimize ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistors.
RURD460, RURD460S are ultrafast diodes with soft recovery characteristics (trr < 55ns) manufactured by Fairchild Semiconductor Corporation, with rated current of 4A and rated voltage of 600V.
