ON Manuals

This document describes the NTMD3P03R2 dual P-channel power MOSFET. The product features high efficiency, low RDS(on), and a small package size, making it suitable for applications such as DC-DC converters, low voltage motor control, and portable battery-powered devices.

NTMD2C02R2/D is a low voltage, high speed switching MOSFET device with ultra low RDS(on) and true logic level performance.

This document describes the features of a 30V, 4.0A, N-channel power MOSFET and 1.0A Schottky barrier diode. The product is packaged in a leadless SMD package, with lower thermal resistance and low Schottky forward voltage drop.

This datasheet provides the specifications of MAC228A/D series silicon bidirectional thyristors, including maximum repetitive off-state voltage, peak non-repetitive surge current, and average gate power.

MAC224A/D Silicon Bidirectional Thyristors are designed primarily for full-wave ac control applications such as lighting systems, heater controls, motor controls and power supplies.

MBR3060/D is a Schottky diode produced by Semiconductor Components Industries, LLC with extremely low Vf, low power loss/high efficiency, highly stable oxide passivated junction and low stored charge, majority carrier conduction.

This document introduces the features of the MAC16HC/D silicon bidirectional thyristors. The product features include: high commutating di/dt and high dv/dt immunity, three quadrant uniform gate trigger currents, 800 volt blocking voltage, 16 amperes RMS on-state current rating at 80°C, 150 amperes high surge current capability, TO-220AB standard package, etc.

This document describes the MAC15S series of silicon bidirectional thyristors, designed for industrial and consumer applications for full wave control of AC loads such as appliance controls, heater controls, motor controls, and other power switching applications. The features include a sensitive gate that allows triggering by microcontrollers and other logic circuits, high immunity to dv/dt with a minimum of 25 V/μs at 110°C, high commutating di/dt with a minimum of 8.0 A/ms at 110°C, specified minimum and maximum values of IGT, VGT, and IH for ease of design, an on-state current rating of 15 Amperes RMS at 70°C, high surge current capability of 120 Amperes, blocking voltage up to 800 Volts, rugged and economical TO220AB package, and uniform gate trigger currents in three quadrants, Q1, Q2, and Q3.

This document introduces the characteristics of MAC15A4/D silicon bidirectional thyristors.

MAC12HC/D is a silicon bidirectional thyristor produced by Semiconductor Components Industries, LLC. This thyristor is mainly used for full-wave ac control applications, such as motor controls, heating controls or dimmers; or wherever full-wave, silicon gate-controlled devices are needed.

MAC12SM and MAC12SN are sensitive gate triacs designed for industrial and consumer applications for full wave control of AC loads, such as appliance controls, heater controls, motor controls, and other power switching applications.

MAC08BT1/D TRIAC 0.8 A is a product of Semiconductor Components Industries, used in solid state relays, MPU interface, TTL logic and other light industrial or consumer applications.

The MPS650/D is NPN and PNP type integrated circuits, with a maximum collector-emitter voltage of 40/60 Vdc, a maximum collector-base voltage of 60/80 Vdc, a maximum emitter-base voltage of 5.0 Vdc, a maximum collector current of 2.0 Adc, and a maximum power dissipation of 625/5.0 mW. The maximum operating temperature is -55 to +150°C.

The MPS5179 is ON Semiconductor's preferred device, a NPN Silicon High Frequency Transistor. This document provides a detailed list of the product's features and characteristics, including maximum ratings, functional operating conditions, packaging and shipping information.