ON Manuals

The NTF3055-100 is a N-channel MOSFET with a rated voltage of 60V and a rated current of 3.0A. It is packaged in a SOT-223 package and is suitable for low voltage, high frequency switching applications such as power supplies, converters and motor controls.

NTGS3446 is a N-channel MOSFET produced by Semiconductor Components Industries, LLC. This device has ultra-low RDS(on), higher efficiency extending battery life, logic level gate drive, diode exhibits high speed, soft recovery, avalanche energy specified, IDSS specified at elevated temperature, Pb-free package is available. It is used in power management in portable and battery-powered products, such as computers, printers, PCMCIA cards, cellular and cordless phones, and notebook PCs.

The NTF2955 is a P-channel MOSFET with a maximum rating of −60 V and −2.6 A. It features a TMOS7 design for low RDS(on) and withstands high energy in avalanche and commutation modes. The device is suitable for use in power supplies, PWM motor control, converters, and power management applications.

This document describes a medium current low voltage rectifier with reverse avalanche characteristics, designed for use as a reverse power transient suppressor. Developed for transient suppression in automotive systems, these devices can operate in the forward mode as standard rectifiers or in the reverse mode as power avalanche rectifiers, providing protection for electronic equipment against overvoltage conditions.

MR2520L is an overvoltage transient suppressor designed for applications requiring a low voltage rectifier with reverse avalanche characteristics for use as reverse power transient suppressors. These devices operate in the forward mode as standard rectifiers or reverse mode as power avalanche rectifier and will protect electronic equipment from overvoltage conditions.

NTP60N06L and NTB60N06L are power MOSFETs designed for low voltage, high speed switching applications in power supplies, converters, power motor controls, and bridge circuits.

NTMS7N03R2 is a N-channel power MOSFET with a 30 V rating and a 7 A rating, packaged in an SO-8. It features ultra-low RDS(on), higher efficiency, logic level gate drive, miniature SO-8 surface mount package and avalanche energy specified. Typical applications include DC-DC converters, power management, motor controls, inductive loads, etc.

This is a high-density power MOSFET with ultra-low RDS(on) for higher efficiency. It has a miniature SO-8 surface mount package that saves board space, and IDSS is specified at elevated temperatures. In addition, the diode exhibits high-speed, soft recovery performance. This product can be used in battery-powered products, portable products, computers, printers, PCMCIA cards, cell phones, and cordless telephones, among other applications.

This document describes the features and characteristics of the NTMS4107N power MOSFET, including ultra-low RDS(on), low gate resistance, and low QG. It is optimized for low side synchronous applications and has high speed switching capability. It is suitable for notebook computer Vcore applications, network applications, and DC-DC converters.

NTMFS4833N is a power MOSFET from Semiconductor Components Industries with an operating voltage of 30V and a maximum current of 191A. It is packaged in a SO-8 FL.

BRD8050/D is a comprehensive power conversion solution for mezzanine cards in routers, switches and base stations. This solution employs highly integrated devices, reducing part count. It also features robust hot swap protection, including an innovative MOSFET temperature sensing shutdown function and state-of-the-art DC-DC conversion technology.

NTMD6N03R2 is a 6A power MOSFET product released by Semiconductor Components Industries, LLC in January 2005. The product features ultra-low on-resistance and is suitable for low-voltage, high-frequency switching circuits. Applications include Dc-Dc converters, computers, printers, mobile phones, etc.

This document is the specification sheet of NTMD6N02R2/D power MOSFET, which mainly introduces the product features and characteristics, including ultra low RDS(on), higher efficiency, logic level gate drive, miniature dual SO-8 surface mount package, high speed, soft recovery diode, avalanche energy specified, SO-8 mounting information.

The NTMD4102PR2 is a P-channel MOSFET from ON Semiconductor that features low RDS(on) performance and is suitable for use in game systems, notebook and desktop computers, and printers