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MITSUBISHI ELECTRIC RA03M3540MD Manual

RA03M3540MD is a 38 dBm output RF MOSFET Amplifier Module for 7.2 volt portable radios that operate in the 350 to 400 MHz range.

MITSUBISHI ELECTRIC RA60H1317M Manual

The RA60H1317M1A is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 136- to 174-MHz range.

MITSUBISHI ELECTRIC RA60H1317M Manual(1)

The RA60H1317M is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to 175-MHz range.

MITSUBISHI ELECTRIC RA35H1516M Manual

The RA35H1516M is a 40-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 154- to 162-MHz range.

MITSUBISHI ELECTRIC RA33H1516M1 Manual

The RA33H1516M1 is a 33-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 154- to 162-MHz range.

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MITSUBISHI ELECTRIC MGFC38V6472 Manual

The MGFC38V6472 is an internally impedance-matched GaAs power FET especially designed for use in 6.4-7.2 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

MITSUBISHI ELECTRIC MGFC38V5867 Manual

The MGFC38V5867 is an internally impedance-matched GaAs power FET especially designed for use in 5.8 – 6.75 GHz band amplifiers.

MITSUBISHI ELECTRIC MGFC36V7785A Manual

The MGFC36V7785A is an internally matched GaAs power FET designed for use in 7.7-8.5 GHz band amplifiers. It features Class A operation, internal matching to a 50-ohm system, high output power, high power gain, high power added efficiency, and low distortion.

MITSUBISHI ELECTRIC MGFC36V7177A Manual

MGFC36V7177A is an internally impedance-matched GaAs power FET especially designed for use in 7.1-7.7 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

MITSUBISHI ELECTRIC MGFC36V5867 Manual

MGFC36V5867 is an internally impedance-matched GaAs power FET especially designed for use in 5.8-6.75GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

MITSUBISHI ELECTRIC MGFC36V3742A Manual

The MGFC36V3742A is an internally impedance-matched GaAs power FET especially designed for use in 3.7-4.2GHz band amplifiers. Product features include: internally matched to 50ohm system, high output power, high power gain, high power added efficiency and low distortion.

MITSUBISHI ELECTRIC MGFC47V5864 Manual

The MGFC47V5864 is an internally impedance-matched GaAs power FET especially designed for use in 5.8 – 6.4 GHz band amplifiers. It features class AB operation, high output power, high power gain and high power added efficiency. It is suitable for use in satellite earth-station communication transmitter and VSAT.