MITSUBISHI ELECTRIC MGFS45V2527A Manual

The MGFS45V2527A is a high power GaAs FET from Panasonic. It is internally impedance-matched and has a working frequency of 2.5-2.7GHz. The output power can reach 32W, the power gain is as high as 12dB, the rated power is 88W, and the storage temperature is -65℃ to 175℃.

MITSUBISHI ELECTRIC MGFS45V2325 Manual

The MGFS45V2325A is an internally impedance-matched GaAs power FET especially designed for use in 2.3 – 2.5 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

MITSUBISHI ELECTRIC MGFS45V2123 Manual

This datasheet lists the parameters of MGFS45V2123A. MGFS45V2123A is an internally matched GaAs power FET especially designed for use in 2.1-2.3 GHz band amplifiers.

MITSUBISHI ELECTRIC MGFS45A2527B Manual

MGFS45A2527B is an internally impedance-matched GaAs power FET especially designed for use in 2.5-2.7GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

MITSUBISHI ELECTRIC MGFS44V2735 Manual

The MGFS44V2735 is an internally impedance-matched GaAs power FET especially designed for use in 2.7 - 3.5 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

MITSUBISHI ELECTRIC MGFL48V1920 Manual

The MGFL48V1920 is a 60W push-pull type GaAs power FET designed for use in 1.9-2.0 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

MITSUBISHI ELECTRIC MGFL45V1920A Manual

The MGFL45V1920A is a power field-effect transistor produced by Panasonic. It is suitable for 1.9-2.0GHz band power amplifier applications and has the characteristics of high output power, high power gain, high power added efficiency and low distortion.

MITSUBISHI ELECTRIC MGFS45B2527B Manual

MGFS45B2527B is a 2.5 - 2.7 GHz band 30W power GaAs FET with internally matched impedance. It features Class AB operation, internal 50(ohm) system matching, high output power, high power gain, and low distortion.

MITSUBISHI ELECTRIC MGF1801BT Manual

The MGF1801BT is a medium-power GaAs FET with an N-channel Schottky gate, designed for use in S to X band amplifiers and oscillators. This device has high linear power gain and high P1dB.

MITSUBISHI ELECTRIC MGF1801B Manual

The document describes MGF1801B, a high-power GaAs FET designed for use in S to X band amplifiers and oscillators. It features high linear power gain and high P1dB. It is suitable for S to X band medium-power amplifiers and oscillators.

MITSUBISHI ELECTRIC MGF1601B Manual

MGF1601B is a N-channel Schottky gate medium-power GaAs FET designed for use in S to X band amplifiers and oscillators. The device features high linear power gain and high P1dB, and is suitable for microstrip circuits.

MITSUBISHI ELECTRIC MGF0917A Manual

This document describes the MGF0917A GaAs FET, which is a high-power gain stage amplifier designed for UHF band amplifiers. It features high output power, high power gain, and high power added efficiency.

MITSUBISHI ELECTRIC MGF0916A Manual

MGF0916A is a L&S BAND / 0.2W SMD non - matched product with features of high output power, high power gain and high power added efficiency.

MITSUBISHI ELECTRIC MGF0912A Manual

MGF0912A is a high-power GaAs FET designed for use in L/S band amplifiers. It features high output power, high power gain, and high power added efficiency. It is suitable for L/S band power amplifiers.

MITSUBISHI ELECTRIC MGF0906B Manual

The MGF0906B is a GaAs FET with an N-channel schottky gate, designed for use in UHF band amplifiers. The device features high output power, high power gain and high power added efficiency. It can be used for UHF Band power amplifiers.

MITSUBISHI ELECTRIC MGF0905A Manual

This document introduces the MGF0905A high-power GaAs FET, which is designed for UHF band amplifiers and features high output power, high power gain, and high power added efficiency.

MITSUBISHI ELECTRIC MGF0904A Manual

MGF0904A is a GaAs FET with an N-channel schottky gate, designed for use in UHF band amplifiers. It features high output power (Po=28.0dBm), high power gain (Gp=13.0dB) and high power added efficiency (P.A.E =40%).

MITSUBISHI ELECTRIC MGF4851A Manual

The MGF4851A is a power InGaAs HEMT designed by Mitsubishi Electric for use in S to K band amplifiers. It features high gain and high P1dB, with typical values of 11 dB and 14.5 dBm, respectively.

MITSUBISHI ELECTRIC MGF2445A Manual

The MGF2445A is a power GaAs FET with an N-channel schottky gate, designed for use in S to Ku band amplifiers.

MITSUBISHI ELECTRIC MGF2430A Manual

The MGF2430A is a high-power GaAs FET produced by Mitsubishi Electric Corporation. It is designed for use in S to Ku band amplifiers. The MGF2430A features high output power, high linear power gain, and high power added efficiency.