MITSUBISHI ELECTRIC Reliability concept for Silicon RF Products Manual

This application note shows the reliability concept and reliability level for Silicon RF products.

MITSUBISHI ELECTRIC ELECTRO STATIC SENSITIVITY FOR RF POWER MODULE RA-series Manual

This application note shows the test results of the electro static discharge level for MITSUBISHI RF Power Modules RA-series products

MITSUBISHI ELECTRIC AN-GEN-042-D Manual

This application note describes the recommended method of applying thermal compound to MITSUBISHI RA series RoHS compliance products.

MITSUBISHI ELECTRIC AN-GEN-062-B Manual

This document is an application note for silicon RF power semiconductors, describing the top view of the test fixture for the RA series (H2S/H2M outline) and the top view of the test fixture with a 6-pin type RF module.

MITSUBISHI ELECTRIC AN-UHF-078-B Manual

This application note describes the electrostatic discharge test results for RA60H4452M1 and RA60H4047M1.

MITSUBISHI ELECTRIC AN-UHF-083-D Manual

This document presents the electrostatic discharge test results for RA30H4552M1 and RA30H4047M1. It explains that these two products use MOS FET devices, which have lower surge endurance compared to silicon bipolar devices and may burn out when exposed to static electricity or surges.

MITSUBISHI ELECTRIC AN-900-026-B Manual

This document describes the output power control method for RA45H7687M1.

MITSUBISHI ELECTRIC AN-900-027-B Manual

This is a technical document for the silicon RF power semiconductors RA45H8994M1 and RA45H7687M1. It includes AM-AM, AM-PM and Vgg2-PM measurement results.

MITSUBISHI ELECTRIC AN-GEN-038-B Manual

This application note shows the test results of surge tolerance for RD-series.

MITSUBISHI ELECTRIC AN-GEN-034-E Manual

This application note shows recommendation device mount method & precaution for RD07&RD02 series.

MITSUBISHI ELECTRIC AN-UHF-108-A Manual

This document is an application note for silicon RF power semiconductors, which presents the RF performance of the RD02MUS1B single-stage amplifier at a frequency range of 400 to 470MHz. The document includes data on frequency characteristics, Pin vs. Pout characteristics, Pout vs. Vdd characteristics, and Pout vs. Idq characteristics.

MITSUBISHI ELECTRIC AN-VHF-050 Manual

This application note shows the RF wide-band characteristics data (Frequency characteristics, Pout vs. Pin characteristics, Pout vs. Vdd characteristics) at f=135 to 175MHz

MITSUBISHI ELECTRIC AN-UHF-076-A Manual

This application note shows the RF characteristics (Frequency Characteristics and Pin vs. Pout characteristics) data with RD00HVS1 using Broad-Band Fixture and a schematic for test fixture.

MITSUBISHI ELECTRIC AN-UHF-060-A Manual

This is an application note for RD01MUS1 RF characteristics, which introduces the RD01MUS1 RF characteristics

MITSUBISHI ELECTRIC AN-UHF-087-A Manual

This document shows the RF performance characteristics of the RD01MUS2 single-stage amplifier at the 450-527 MHz band, including the relationship between output power and input power.

MITSUBISHI ELECTRIC AN-VHF-047-A Manual

This application note shows the RF wide band characteristics data (Frequency characteristics, Pout vs. Pin characteristics) at 135 to 175 MHz band.

MITSUBISHI ELECTRIC AN-UHF-098-B Manual

This is an application note about the RF wide band characteristics data (Frequency characteristics, Pout vs. Pin characteristics) at 400 to 470 MHz band of RD07MUS2B

MITSUBISHI ELECTRIC AN-UHF-097-C Manual

This application note shows the RF wide band characteristics data (Frequency, Pout vs. Pin, Pout vs. Vgg characteristics) at 380 to 470 MHz band.

MITSUBISHI ELECTRIC RD07MUS2B TETRA Manual

This is a Silicon RF Power Semiconductors application note, which introduces the performance data of RD07MUS2B TETRA single-stage amplifier at f=350-400MHz, Vdd=7.2V.

MITSUBISHI ELECTRIC APPLICATION NOTE Manual

This application note shows the RF wide band characteristics data (Frequency characteristics, Pout vs. Pin characteristics) at 763 to 870 MHz band.