MITSUBISHI Manuals (Industrial)

This RD35HUF2 single-stage amplifier with f=135-175MHz evaluation board application note introduces the features of the evaluation board, including frequency range, input power, output power, quiescent current, operating current, etc.

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AN-900-043-A is an application note about RD04HMS2 single-stage amplifier, which contains equivalent circuit, PCB layout, component list and standard deliverable, thermal design of heat sink, typical RF characteristics.

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RD04HMS2 single-stage amplifier with f=135-175MHz evaluation board

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This application note shows the RF wide-band characteristics data (Frequency characteristics, Pin vs. Pout characteristics, Pout vs. Vdd characteristics ) at f=400 to 527MHz

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This application note shows the RF Wide band characteristics data (Pout vs. Frequency characteristics, Pout vs. Pin characteristics) at 800-900 MHz Band.

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This application note shows the RF Wide band characteristics data of RD01MUS1 and RD07MUS2B 2-Stage amplifier at f=763-870MHz,Vdd=7.2V

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This application note shows the RF wide band characteristics data (Frequency characteristics, Pout vs. Pin characteristics) at 763 to 870 MHz band.

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This is a Silicon RF Power Semiconductors application note, which introduces the performance data of RD07MUS2B TETRA single-stage amplifier at f=350-400MHz, Vdd=7.2V.

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This application note shows the test results of the electro static discharge level for MITSUBISHI RF Power Modules RA-series products

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This application note shows the reliability concept and reliability level for Silicon RF products.

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This application note provides precautions and recommendations for Mitsubishi Electric's Silicon RF Power Semiconductors.

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This document introduces the features and characteristics of Mitsubishi Electric's third generation intelligent power modules.

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This document describes the features of using Mitsubishi IGBT modules, including their ruggedness, low loss, and ease of use. Advanced processing technologies are utilized to achieve low on-state saturation voltages while maintaining high switching speed for 20kHz operation. The document also explains the structure and operation of IGBT modules and provides a comparison with MOSFET and BJT devices.

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This document introduces general application considerations for Mitsubishi H-Series IGBT and intelligent power modules, including power circuit design, snubber design and thermal design.

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This is a three-phase inverter module suitable for photovoltaic power generation systems and fuel cell systems

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Mitsubishi Industrial Color TFT-LCD Module 'DIAFINE' is a high-performance LCD display module suitable for various devices and machines. It features optimal design, high reliability, and real color display.

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