The NX5P1000 is an advanced power switch and ESD- protection device for USB OTG
applications. The device includes under voltage and over voltage lockout, over-current,
over-temperature, reverse bias and in-rush current protection circuits. These circuits are
designed to isolate a VBUS OTG voltage source automatically from a VBUS interface pin
when a fault condition occurs. The device features two power switch terminals, one input
(VINT) and one output (VBUS). It has a current limit input (I
The NX3P191 is a high-side load switch which features a low ON resistance P-channel
MOSFET. It has input inrush current reduction that supports more than 500 mA of
continuous current. It also has an integrated output discharge resistor to discharge the
output capacitance when disabled. Designed for operation from 1.1 V to 3.6 V, it is used in
power domain isolation applications to reduce power dissipation and extend battery life.
The enable logic includes integrated logic level translation
The NX3P190 is a high-side load switch which features a low ON resistance P-channel
MOSFET that supports more than 500 mA of continuous current. Designed for operation
from 1.1 V to 3.6 V, it is used in power domain isolation applications to reduce power
dissipation and extend battery life. The enable logic includes integrated logic level
translation making the device compatible with lower voltage processors and controllers.
The NX3P190 is ideal for portable, battery operated applications d
The NX5P2090 is an advanced power switch for USB OTG applications. It includes
under-voltage and over-voltage lockout, over-current, over-temperature, reverse bias and
in-rush current protection circuits. These are designed to automatically isolate a VBUS
OTG voltage source from a VBUS interface pin when a fault occurs. The device features
two power switch terminals, one input (VINT) and one output (VBUS); a current limit input
(ILIM) for defining the over-current and in-rush current limit;
The NX5P2924B is a high-side load switch which features a low ON resistance N-channel
MOSFET with controlled slew rate that supports 2.5 A of continuous current. Designed for
operation from 0.8 V to 5.5 V, it is used in power domain isolation applications to reduce
power dissipation and extend battery life. The enable logic includes integrated logic level
translation making the device compatible with lower voltage processors and controllers.
The NX5P2924B is ideal for portable, battery oper
