MITSUBISHI SEMICONDUCTOR MGFC36V4450A Manual

Update: 28 September, 2023

The document describes the features and characteristics of the MGFC36V4450A GaAs FET model produced by MITSUBISHI SEMICONDUCTOR. This GaAs FET features a high output power of up to 4W, a power gain of 12dB, a power added efficiency of 32%, and low distortion. The product is suitable for power amplifiers and digital wireless communication applications in the 4.4~5.0 GHz frequency band.

File format: PDF

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MD5 Checksum: 38C632FD99E27608F33CCCED5D32F99D

Publication date: 08 May, 2012

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PDF Link: MITSUBISHI SEMICONDUCTOR MGFC36V4450A Manual PDF

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