Update: 30 September, 2023
The RA03M8087M is a 3.6W RF MOSFET Amplifier Module from RaSilicon. It operates with a supply voltage of 7.2V and is suitable for portable radios in the 806-870MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 2.5V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 3V (typical) and 3.5V (maximum). At VGG=3.5V, the typical gate current is 1 mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.
File format: PDF
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MD5 Checksum: 628D75ED66F1849C58194D6E3D3FA4C0
Publication date: 21 March, 2012
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PDF Link: MITSUBISHI ELECTRIC RA03M8087M Manual PDF