Key facts
- Manuals
- 3
- Languages
- ZH
- Last added
- 2012-06-07
Featured IOR manuals
International Rectifier AN-978 RevD Application Note
The document provides a comprehensive guide for using the AN‑978 RevD high‑voltage floating‑gate driver IC. It covers gate‑drive voltage requirements, typical circuit topologies, bootstrap component selection, power‑loss calculations, handling of VS negative transients, PCB layout recommendations, and troubleshooting tips.
Key sections include high‑end device gate‑drive requirements, typical structure diagrams, methods to increase gate‑drive current, continuous gate‑drive provision, negative gate‑bias generation, driving buck converters, dual‑active‑bridge and switched‑reluctance motor drives, full‑bridge with current‑mode control, brushless and induction motor drives, push‑pull configurations, high‑end P‑channel operation, and a detailed fault‑diagnosis guide. This manual is written in Chinese.
Covers: High‑end device gate‑drive requirements · Typical structure diagram · Bootstrap component selection · MGD power‑loss calculation · VS negative transient handling · PCB layout and general considerations
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International Rectifier AN-978 RevD Application Note
Application Note 30 pages · 444 KB · ZHThis application note explains gate‑drive requirements and design guidelines for the high‑voltage floating‑gate driver IC AN‑978 RevD.
Which document do I need?
Application Note
How to use the product for one specific task, with worked examples.
Questions answered in IOR manuals
What gate‑drive voltage is required for the AN‑978?
The gate‑drive voltage must be 10 V to 15 V higher than the drain voltage.
How much gate current can each MOSFET handle?
Each MOSFET can source or sink between 0.12 A and 4 A of gate current.