ST Manuals

BAT47 BAT48 are Schottky diodes featuring very low turn-on voltage and fast switching. These devices have integrated protection against excessive voltage such as electrostatic discharges.

BAT46 is a small signal Schottky diode with high breakdown voltage and low turn-on voltage

BAT42 BAT43 are Schottky diodes with very low turn-on voltage and fast switching characteristics.

BAT41 is a small signal Schottky diode featuring very low turn-on voltage and fast switching. This device has integrated protection against excessive voltage such as electrostatic discharges.

This file introduces the features and characteristics of BAR42FILM and BAR43FILM, including power rating, operating temperature range, reverse voltage, forward current, etc.

1N6263 is a Schottky diode with high breakdown voltage, low turn-on voltage and ultrafast switching speed. It is mainly intended for high level UHF/VHF detection and pulse applications with broad dynamic range.

The document describes the features and characteristics of the 1N5711 small signal Schottky diode. The diode features high breakdown voltage, low turn-on voltage, and ultrafast switching. It is primarily intended for high-level UHF/VHF detection and pulse applications with a broad dynamic range.

BAR46BAR46A is a Schottky diode produced by Texas Instruments, with a maximum reverse voltage of 100V, a maximum forward current of 150mA, and a maximum operating temperature of 150℃

The L6210 is a monolithic IC containing eight Schottky diodes arranged as two separated diode bridges. This diodes connection makes this device versatile in many applications. They are used particular in bipolar stepper motor applications, where high efficient operation, due to low forward voltage drop and fast reverse recovery time, are required.

This is a document providing information on a product in full production. It describes the features and characteristics of the SPBT2632C1A Bluetooth technology class-1 module.

SPZB32W1x1.4 is a 2.4 GHz IEEE 802.15.4 compliant SMD module based on the ST STM32W chipset, featuring an integrated 2.4 GHz transceiver, PHY and MAC IEEE 802.15.4 features, ARM® Cortex-M3 core, embedded Flash and RAM, encryption (AES-128) accelerator, up to 20 dBm nominal TX output power, up to 105 dBm RX sensitivity, 16 channels (IEEE 802.15.4 channel 11 to 26), multiple configurable interfaces (UART, SPI, I2C, ADC, GPIOs), industry standard JTAG programming, 24 MHz and 32.768 kHz stable Xtal, less than 2 µA typ. power consumption in deep sleep mode (32.768 Xtal), multiple antenna options (integrated antenna or integrated UFL connector), multiple protocol stack options, single voltage supply (2.1 to 3.6 V), FCC and CE compliant qualified, small form factor (16.4 x 26.5 mm), operating temperature range: -40 °C to +85 °C.

This is a document containing information on the SPBT2532C2.AT2 Bluetooth® V2.1 + EDR module in full production. It describes the features and characteristics of the module.

This document provides information on a product in full production. It describes the features and characteristics of the SPBT2632C2A Bluetooth technology class-2 module.