ST Manuals

M34E02, M34E02-F 2 Kbit serial presence detect (SPD) EEPROM for double data rate (DDR1 and DDR2) DRAM modules. It features 100 kHz and 400 kHz I2C bus serial interface, byte and page write, and self-timed write cycle.

This document describes the features of the SRIX4K 13.56 MHz short-range contactless memory chip, including 4096-bit EEPROM, anticollision, and anti-clone functions.

256-Kbit serial I²C bus EEPROM Datasheet − production data

M950x0 M950x0-W M950x0-R 4 Kbit, 2 Kbit and 1 Kbit serial SPI bus EEPROM with high-speed clock

M95128-W M95128-R M95128-DF 128-Kbit serial SPI bus EEPROM with high-speed clock datasheet. This datasheet provides information on the M95128-W, M95128-R, and M95128-DF 128-Kbit serial SPI bus EEPROMs with high-speed clock.

The M95320-W, M95320-R, M95320-DR are 32 Kbit serial SPI bus EEPROMs, compatible with the Serial Peripheral Interface (SPI) bus, with a 32 Kb (4 Kbytes) of EEPROM memory array, a page size of 32 bytes, a high clock speed of 20 MHz, a single supply voltage of 2.5 V to 5.5 V, a operating temperature range of -40°C to +85°C, enhanced ESD protection, more than 4 million write cycles, and more than 200 years of data retention.

This document provides information on the features and characteristics of M48Z512A/Y/V ZEROPOWER® RAM, including integrated ultra low power SRAM, power-fail control circuit, and battery, unlimited WRITE cycles, 10 years of data retention in the absence of power, automatic power-fail chip deselect and WRITE protection, etc.

This manual describes the M48Z2M1Y and M48Z2M1V series integrated ultra low power SRAMs, power-fail control circuits, and batteries.

Features and characteristics of M93S66, M93S56 M93S46 4Kbit, 2Kbit and 1Kbit (16-bit wide) MICROWIRE Serial Access EEPROM with Block Protection

This document describes the features and characteristics of the M24C16-x, M24C08-x, M24C04-x, M24C02-x, and M24C01-x series products, including support for both the 100 kHz I2C Standard-mode and the 400 kHz I2C Fast-mode, write control input, byte and page write (up to 16 bytes), random and sequential read modes, self-timed programming cycle, automatic address incrementing, enhanced ESD/latch-up protection, more than 1 million write cycles, and more than 40-year data retention.

This datasheet details the features and characteristics of STMicroelectronics' M93Cx6 series of MICROWIRE® serial access EEPROMs. The family includes 16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) devices.

This is a product information about the M24C32-W M24C32-R M24C32-F M24C32-X M24C32-DF 32-Kbit serial I²C bus EEPROM datasheet

The document describes the features and characteristics of the M48Z35 and M48Z35Y, two 256 Kbit (32 Kbit x 8) ZEROPOWER® SRAM products, including integrated ultra low power SRAM, power-fail control circuit, and battery, equal READ and WRITE cycle time, automatic power-fail chip deselect and WRITE protection, etc.

M48Z58 and M48Z58Y are integrated, ultra low power SRAMs with power-fail control circuit and battery. They are 5V, 64 Kbit (8 Kbit x 8) ZEROPOWER® SRAMs. They have automatic power-fail chip deselect and WRITE protection features, and support different WRITE protect voltages. They come in CAPHAT™ DIP package with a self-contained battery, and also provide a 28-lead SOIC and SNAPHAT® top (to be ordered separately) packaging options. They are pin and function compatible with JEDEC standard 8 Kbit x 8 SRAMs and are RoHS compliant.