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FQPF12N20L 200V LOGIC N-Channel MOSFET is a N-channel enhancement mode power field effect transistor produced by Fairchild Semiconductor Corporation. This device has low on-state resistance, superior switching performance and high energy pulse withstand capability, suitable for high efficiency switching DC/DC converters, switch mode power supply, motor control and other fields.
FQPF12N60 is a high efficiency switch mode power supply using Fairchild's proprietary planar stripe DMOS technology, which has low on-state resistance, superior switching performance and high energy pulse endurance.
FQP12N60C/FQPF12N60C is a 600V N-channel MOSFET produced by Fairchild with a maximum current of 12A, 0.65 ohms on-state resistance, 21 picofarads capacitance and 48 nanoamperes gate charge, suitable for high efficiency switched mode power supplies, active power factor correction, half-bridge topology electronic lamp ballasts and other applications
FQPF12N60CT 600V N-Channel MOSFET is a power field effect transistor produced by Fairchild Semiconductor Corporation using Fairchild's proprietary planar stripe DMOS technology. This advanced technology has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.
FQPF12P10 is a P-channel MOSFET produced by Fairchild. It has low gate charge, low on-state resistance, fast switching, 100% avalanche testing and other features. It is suitable for applications such as audio amplifier, high efficiency switching DC/DC converters and DC motor control.
This document describes the features and characteristics of the FQPF12P20 200V P-Channel MOSFET produced by Fairchild Semiconductor International. It uses advanced DMOS technology to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse. These devices are well suited for high efficiency switching DC/DC converters.
This is a technical document about FQPF12P20. It introduces the features and characteristics of this product, including on-state resistance, switching performance, avalanche and commutation mode, efficiency, gate charge, Crss, fast switching, avalanche tested, dv/dt capability, etc.
This document describes the FQPF13N06 N-Channel MOSFET product produced by Fairchild Semiconductor Corporation. The product uses advanced DMOS technology, with low on-state resistance, superior switching performance, and high energy pulse withstand capability. It is suitable for low voltage applications such as DC/DC converters and high efficiency switching control in portable and battery operated products.
FQPF13N06 60V N-Channel MOSFET is a power field effect transistor produced by Fairchild Semiconductor Corporation. It has low on-state resistance, superior switching performance and high energy pulse withstand capability. It is suitable for applications such as DC/DC converters, high efficiency switching for power management in portable and battery operated products.
This document describes the features and characteristics of the FQPF13N06L 60V logic N-channel MOSFET product. This product is produced using Fairchild's proprietary planar stripe DMOS technology, which minimizes on-state resistance, provides superior switching performance, and can withstand high energy pulses. It is suitable for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.
FQPF13N06L is a 60V logic N-channel MOSFET produced by Fairchild Semiconductor. It features low on-state resistance, superior switching performance and high energy pulse tolerance, and is suitable for low-voltage applications such as automotive, DC/DC converters, and high-efficiency switching for power management in portable and battery-operated products.
