Fairchild Manuals

The CNY17X, CNY17FX, MOC810X phototransistor optocouplers features include white package options, UL recognition, VDE recognition, high BV CEO, low parasitic capacitance, and closely matched current transfer ratio (CTR)

This datasheet introduces the features and characteristics of Fairchild's FOD814 series, FOD617 series, and FOD817 series 4-pin high operating temperature phototransistor optocouplers.

The MOC306X-M and MOC316X-M devices consist of a GaAs infrared emitting diode optically coupled to a monolithic silicon detector performing the function of a zero voltage crossing bilateral triac driver. They are designed for use with a triac in the inter- face of logic systems to equipment powered from 115/240 VAC lines, such as solid-state relays, industrial controls, motors, sole- noids and consumer appliances, etc.

CNY17X, CNY17FX, MOC810X are phototransistor optocouplers produced by Fairchild Semiconductor Corporation. They have high BV CEO (CNY17X/M, CNY17FX/M, MOC8106/7/8), Closely matched current transfer ratio (CTR), Very low coupled capacitance etc.

This document introduces the features and characteristics of Fairchild Semiconductor Corporation's FOD814 series, FOD617 series and FOD817 series 4-pin high operating temperature phototransistor optocouplers.

Zero-cross optoisolators are devices that convert a logic signal into an AC current signal that can drive a triac.

The MOC301XM and MOC302XM series are optically isolated triac driver devices. These devices contain a GaAs infrared emitting diode and a light activated silicon bilateral switch, which functions like a triac. They are designed for interfacing between electronic controls and power triacs to control resistive and inductive loads for 115 VAC operations.

This document introduces the N-Channel MOSFET product FQP10N60C/FQPF10N60C from Fairchild Semiconductor Corporation. This product is produced using advanced DMOS technology and features low on-state resistance, superior switching performance, and high energy pulse withstand capability. It is suitable for applications such as high efficiency switched mode power supplies, active power factor correction, and electronic lamp ballasts based on half bridge topology.

FQP10N60C / FQPF10N60C is a 600V N-Channel MOSFET from Fairchild Semiconductor Corporation with 9.5A, 600V, RDS(on) = 0.73Ω @VGS = 10 V, low gate charge (typical 44 nC), low Crss (typical 18 pF), fast switching, 100% avalanche tested and improved dv/dt capability.

This document mainly introduces the features and characteristics of QFET products.

This document introduces the technical characteristics, application areas, current stock and technical data of DINGHAO Technology QFET products.

This product is a 400V N-Channel MOSFET. Its features include 10.5A, 400V, RDS(on)=0.5 Ω @VGS=10V, low gate charge (typical 28 nC), low Crss (typical 85pF), fast switching, 100% avalanche tested, improved dv/dt capability, etc.

FQP11N50CF/FQPF11N50CF is a 500V N-Channel MOSFET produced by Fairchild. It has 11A current, 500V voltage, 0.55Ω on-state resistance, 43 nC gate charge, 20pF Crss, fast switching, 100% avalanche tested, improved dv/dt capability and 90ns fast recovery body diode.

FQPF11P06 is a 60V P-channel MOSFET produced by Fairchild Semiconductor Corporation. This device is suitable for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.

This document describes the features and characteristics of the FQPF11P06, a 60V P-Channel MOSFET produced by Fairchild. This product utilizes advanced DMOS technology, providing low on-state resistance, superior switching performance, and the ability to withstand high energy pulses. It is well-suited for low voltage applications, such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.