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Featured MRF7S15100HR3/MRF7S15100HSR3 manuals

Freescale MRF7S15100HR3/MRF7S15100HSR3 RF Power Field Effect Transistor Datasheet
This Freescale datasheet describes the RF Power Field Effect Transistors MRF7S15100HR3 and MRF7S15100HSR3, N‑channel enhancement‑mode lateral MOSFETs designed for CDMA base‑station applications from 1470 MHz to 1510 MHz. It includes typical performance figures such as 28 V peak‑to‑peak voltage, 600 mA drain current, 23 W average output power, and 19.5 dB power gain.
The document also lists maximum ratings, thermal characteristics, electrical parameters, ESD protection data, and a complete test‑circuit schematic with component values. Revision history, related application notes, and links to Freescale software tools (including an MTTF calculator) are provided at the end.
Covers: Technical Data · Maximum Ratings · Thermal Characteristics · Electrical Characteristics · ESD Protection · Test Circuit Schematic
Latest MRF7S15100HR3/MRF7S15100HSR3 manuals
Freescale MRF7S15100HR3/MRF7S15100HSR3 RF Power Field Effect Transistor Datasheet
Datasheet 13 pages · 235 KB · ENFreescale's datasheet for the MRF7S15100HR3 and MRF7S15100HSR3 RF Power Field Effect Transistors provides specifications, ratings, and test circuit details.
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Datasheet
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in MRF7S15100HR3/MRF7S15100HSR3 manuals
What is the maximum drain‑source voltage rating?
The device is rated for a drain‑source voltage from –0.5 V to +65 V.
From: Freescale MRF7S15100HR3/MRF7S15100HSR3 RF Power Field Effect Transistor Datasheet
What is the typical output power at 1 dB compression?
At 1 dB compression the transistor can deliver about 100 W continuous wave.
From: Freescale MRF7S15100HR3/MRF7S15100HSR3 RF Power Field Effect Transistor Datasheet
