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Fuman TC4953ES MOSFET Datasheet
The TC4953ES is a P‑channel enhancement MOSFET fabricated with advanced CMOS technology. It offers strong ESD protection (HBM > 6 kV) and a low gate‑threshold voltage of –0.6 V.
Key electrical ratings include a maximum drain‑source voltage of –10 V, a maximum gate‑source voltage of –5 V, and a continuous drain current of –3 A. Typical on‑resistance is 85 mΩ at VGS = –4.5 V and 110 mΩ at VGS = –2.5 V. The device is supplied in an SOP‑8 package. This manual is written in Chinese.
Covers: Features · Maximum Ratings and Thermal Characteristics · Electrical Characteristics · Package Information
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Fuman TC4953ES MOSFET Datasheet
Datasheet 3 pages · 163 KB · ZHThe TC4953ES is an 11 V P‑channel enhancement MOSFET with low on‑resistance and high ESD protection.
Which document do I need?
Datasheet
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in Fuman manuals
What is the maximum drain‑source voltage of the TC4953ES?
The maximum drain‑source voltage is –10 V.
What ESD protection level does the device provide?
It provides ESD protection greater than 6 kV (HBM).