RN1410,RN1411 is a NPN type silicon transistor produced by Toshiba, which has an internal bias resistor and can be used in various switching circuits, inverter circuits, interface circuits and driver circuits.

RN2114～RN2118 is a PNP type silicon transistor produced by Toshiba. It features high withstand voltage, low current, low power consumption, and is suitable for various switch, drive, interface and other circuits.

This document describes the features and characteristics of Toshiba's bidirectional thyristor products SM8G45, SM8J45, SM8G45A, SM8J45A released on July 8, 2004. These products are designed for AC power control, with peak repetitive off-state voltage of 400, 600V, effective on-state current of 8A, and critical rate of rise of off-state voltage of 10V/μs (Min.) for general type or 4V/μs (Min.) for high sensitivity type. The products are packaged in TO-220AB, providing easy handling and installation.

MT6P03AE is a silicon NPN transistor produced by Toshiba. The maximum voltage is 10V, the maximum current is 40mA, and the maximum power loss is 100mW. The package form is 6-pin ES6.

SM16GZ47, SM16JZ47, SM16GZ47A, SM16JZ47A are Toshiba's bidirectional silicon planar thyristors for AC power control, with features such as 400V, 600V peak repetitive off-voltage, 16A effective on-current, 30mA (general type) or 20mA (high sensitivity type) gate trigger current, 10V/μs (general type) or 4V/μs (high sensitivity type) transition time critical off-voltage rise rate, and 1500V AC 60 seconds insulation resistance.