ST Manuals (Others)

Introduces the features and characteristics of M24C16, M24C08, M24C04, M24C02, M24C01 16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit Serial I²C Bus EEPROM, including two-wire I²C serial interface, 400kHz protocol, single supply voltage, write control input, byte and page write (up to 16 bytes), random and sequential read modes, self-timed programming cycle, automatic address incrementing, enhanced ESD/Latch-Up protection, more than 1 million erase/write cycles, more than 40 years of data retention time

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M68AF127B is a 128K x 8-bit SRAM with OUTPUT ENABLE, supply voltage of 4.5 to 5.5V, equal cycle and access times of 55ns, low standby current, low VCC data retention voltage of 2V, TRI-STATE COMMON I/O, and low active and standby power.

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M29W160ET M29W160EB 16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory provides 16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory. It has a supply voltage of 2.7V to 3.6V, 70, 90ns access time, 10µs per byte/word typical programming time, 35 memory blocks, 1 boot block (top or bottom location), 2 parameters and 32 main blocks, embedded byte/word programming algorithms of the program/erase controller, erase suspend and resume modes (reading and programming another block during erase suspend), unlock bypass programming command (faster production/batch programming), temporary block unprotected mode, 64-bit security code of common flash interface, standby and automatic standby, 100,000 program/erase cycles/block, electronic signature manufacturer code: 0020h, top device code M29W160ET: 22C4h, bottom device code M29W160EB: 2249h.

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M54HC137 and M74HC137 are high speed CMOS 3 to 8 line decoder/latch (inverting) fabricated in silicon gate C2MOS technology. It has the same high speed performance of LSTTL combined with true CMOS low power consumption.

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M54HC42/M74HC42 is a high performance CMOS BCD-TO-DECIMAL DECODER with LSTTL high speed performance and CMOS low power consumption.

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M27C800 is an 8 Mbit EPROM offered in the two ranges UV (ultra violet erase) and OTP (one time programmable). It is ideally suited for micro-processor systems requiring large data or program storage. It is organised as either 1 Mwords of 8 bit or 512 Kwords of 16 bit. The pin-out is compatible with the most common 8 Mbit Mask ROM. The FDIP42W (window ceramic frit-seal package) has a transparent lid which allows the user to ex- pose the chip to ultraviolet light to erase the bit pat- tern. A new pattern can then be written rapidly to the de- vice by following the programming procedure. For applications where the content is programmed only one time and erasure is not required, the M27C800 is offered in PDIP42, PLCC44 and SO44 packages.

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The L2720D is a low drop dual power operational amplifier with an output current of 1A. It operates at low voltages and can be used with single or split power supplies. The L2720D is suitable for a wide range of applications, such as servo amplifiers and power supplies. Its features include low input offset voltage, large common-mode and differential mode range, low saturation voltage, thermal shutdown, and clamp diode.

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M29F400T/M29F400B is a 4Mbit (512Kb x8 or 256Kb x16, Boot Block) Single Supply Flash Memory from Toshiba, its main features include 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READOPERATIONS, FAST ACCESS TIME: 55ns, FAST PROGRAMMING TIME – 10µs by Byte / 16µs by Word typical etc.

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PSD935G2 is a configurable memory system on a chip that includes up to 4 Mbit of primary memory, 256 Kbit of secondary memory, 64 Kbit of SRAM, 3,000 gates of PLD, 52 reconfigurable I/O ports, enhanced JTAG serial port, programmable power management, etc.

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This document introduces the features and characteristics of M95320 and M95640 32Kbit and 64Kbit Serial SPI Bus EEPROMs With High Speed Clock products, including compatibility with SPI Bus Serial Interface, single power supply voltage, 20MHz, 10MHz, 5MHz or 2MHz clock rates, 5ms or 10ms Write Time, Status Register, Hardware Protection of the Status Register, BYTE and PAGE WRITE, Self-Timed Programming Cycle, Adjustable Size Read-Only EEPROM Area, Enhanced ESD Protection, More than 100000 or 1 million Erase/Write Cycles, More than 40-Year Data Retention, etc.

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74V1G05 is a single open drain type inverter of 74 series, which has the characteristics of high speed, low power consumption, high noise suppression, open drain output, wide power supply range, and power down protection.

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The 74LVC373A is a low voltage CMOS 8-bit D-type latch fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. It is ideal for 1.65 to 3.6 VCC operations and low power and low noise applications. These 8 bit D-Type latch are controlled by a latch enable input (LE) and an output enable input (OE). While the LE inputs is held at a high level, the Q outputs will follow the data input precisely or inversely. When the LE is taken low, the Q outputs will be latched precisely or inversely at the logic level of D input data. While the (OE) input is low, the 8 outputs will be in a normal logic state (high or low logic level) and while high level the outputs will be in a high impedance state. This device is designed to interface directly High Speed CMOS systems with TTL and NMOS components. It has more speed performance at 3.3V than 5V AC/ACT family, combined with a lower power consumption. All inputs are equipped with protection circuits

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This document describes the features and characteristics of M29F800DT and M29F800DB 8 Mbit flash memory, including supply voltage, access time, programming time, memory blocks, programming/erase controller, etc.

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TSM104/A is a monolithic IC that includes four op-amps and an adjustable shunt voltage reference, offering space and cost saving in many applications like power supply management or data acquisition systems.

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LD1085xx is a low dropout positive voltage regulator with adjustable output current up to 3 A. Typical dropout is 1.3 V (at 3 A).

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LM134-LM234-LM334 are 3-terminal adjustable current sources characterized by: operating current range of 10000: 1, excellent current regulation, wide dynamic voltage range of 1V t 10V

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This document describes the features and characteristics of a series of N-channel 600V MOSFET products, including extremely high dv/dt capability, improved ESD capability, 100% avalanche tested, etc. These products are suitable for low power battery chargers, switch mode low power supplies (SMPS), and low power CFL (compact fluorescent lamps) applications.

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STTH5L06D/B/FP is a high voltage rectifier diode from ST company. It is suitable for boost diodes in discontinuous or critical mode power factor corrections. It can also be used as a freewheeling diode in power supplies and other power switching applications.

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The M48T512Y/V TIMEKEEPER RAM is a 512Kb x 8 non-volatile static RAM and real time clock organized as 524,288 words by 8 bits. The special DIP package provides a fully integrated battery back-up memory and real time clock solution.

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