ATMEL Manuals (Others)

The AT28C010 is a high-performance EEPROM with 1 megabyte of storage space organized as 131,072 8-bit words. Manufactured with Atmel's advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 mW. When the device is deselected, the CMOS standby current is less than 200 µA. The AT28C010 is accessed like a Static RAM for the read or write cycle without the need for external components. The device contains a 128-byte page register to allow writing of up to 128 bytes simultaneously. During a write cycle, the address and 1 to 128 bytes of data are internally latched, freeing the address and data bus for other operations. Following the initiation of a write cycle, the device will automatically complete the page write operation.

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AT49BV040B is a 2.7V to 5.5V in-system reprogrammable Flash Memory from Atmel. It has 4Mb of memory and is organized as 524,288 words by 8 bits. The read access time is 70 ns (VCC = 2.7V to 3.6V) and 55 ns (VCC = 4.5V to 5.5V). The power dissipation is 72 mW (VCC = 2.7V to 3.6V) and 110 mW (VCC = 4.5V to 5.5V).

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AT29LV512 is a 3-volt-only in-system Flash programmable erasable read-only memory (PEROM) produced by Atmel. Its features are single supply voltage range 3V to 3.6V, 3-volt Only Read and Write Operation, Software Protected Programming, Low-power Dissipation - 15 mA Active Current - 50 µA CMOS Standby Current, Fast Read Access Time - 120 ns, Sector Program Operation - Single-cycle Reprogram (Erase and Program), 512 Sectors (128 Bytes / Sector), Internal Address and Data Latches for 128 Bytes, Fast Sector Program Cycle Time - 20 ms Max, Internal Program Control and Timer, DATA Polling for End of Program Detection, Typical Endurance > 10,000 Cycles, CMOS and TTL Compatible Inputs and Outputs, Green (Pb / Halide-free) Packaging Option.

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AT29BV010A is a 2.7-3.6V single supply voltage Flash memory that is programmable and erasable. It features fast read access time, low power dissipation, sector program operation, two 8K bytes boot blocks, and more.

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AT29BV020 is a single-voltage 2.7-volt in-system Flash Programmable and Erasable Read Only Memory (PEROM). Its 2 megabits of memory is organized as 262,144 words by 8 bits. Manufactured with Atmel's advanced nonvolatile CMOS EEPROM technology, the device offers access times to 120 ns, and a low 54 mW power dissipation. When the device is deselected, the CMOS standby current is less than 50 µA. The device endurance is such that any sector can typically be written to in excess of 10,000 times. The programming algorithm is compatible with other devices in Atmel's Low Voltage Flash family of products. To allow for simple in-system reprogrammability, the AT29BV020 does not require high input voltages for programming. The device can be operated with a single 2.7V to 3.6V supply. Reading data out of the device is accomplished through internal address and data latches for 256 bytes. Two 8K bytes boot blocks with lockout are provided on the AT29BV020 and have 1024 sectors (each 256 bytes).

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The document describes the features and characteristics of the AT29LV020 product, including single voltage supply, 3V to 3.6V supply range, fast read access time, low power dissipation, etc.

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The AT29BV040A is a 3-volt-only in-system Flash Programmable and Erasable Read Only Memory (PEROM)

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This document describes the features and characteristics of the AT49BV802D(T) product, including single voltage read/write operation, access time, sector erase architecture, fast byte/word program time, low-power operation, etc.

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AT49BV160D(T) is a 16-megabit Flash memory with a 32K word (64K byte) sector erase architecture with individual write lockout. It features a fast word program time (10 microseconds) and fast sector erase time (100 milliseconds). The device can be read or reprogrammed using a single power supply, making it ideal for in-system programming.

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AT49BV160S(T) is a 2.7V 16Mbit Flash memory from Atmel with 39 sectors for erase operations.

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This document is the AT49BV163D(T) product introduction manual, which introduces the features and characteristics of the product

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The AT49BV320D(T) is a 2.7 volt 32-megabit flash memory organized as 2,097,152 words of 16 bits each. The memory is divided into 71 sectors for erase operations. The device is offered in a 48-lead TSOP package and a 47-ball CBGA package. The device has CE and OE control signals to avoid any bus contention. This device can be read or reprogrammed using a single power supply, making it ideally suited for in-sys- tem programming. The device powers on in the read mode. Command sequences are used to place the device in other operation modes.

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The AT49BV320S(T) is a 32Mbit flash memory device from Atmel. It has 64K byte 63 sectors and 8K byte 8 sectors and supports single voltage read/write operations.

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AT49SV322D(T) is a 1.8-volt 32-megabit Flash memory with features including single voltage read/write operation, 80 ns access time, 63 32K word (64K Bytes) sectors and 8 4K word (8K Bytes) sectors with individual write lockout, fast word program time, low-power operation, etc.

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This document introduces the AT49BV640D(T) storage device's features

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The AT49BV640S is a 2.7-volt 32-megabit Flash memory organized as 4,194,304 words of 16 bits each. The memory is divided into 135 sectors for erase operations. The device is offered in a 64-ball CBGA package. The device has CE and OE control signals to avoid any bus contention. This device can be read or reprogrammed

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AT29C512 is a 5V-only in-system Flash programmable and erasable read-only memory (PEROM) with features like fast read access time, sector program operation, hardware and software data protection, etc.

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