ON Manuals (Industrial)

The CS8182 is a monolithic integrated low dropout tracking regulator designed to provide adjustable buffered output voltage that closely tracks (±10 mV) the reference input. The output delivers up to 200 mA while being able to be configured higher, lower or equal to the reference voltages. The output has been designed to operate over a wide range (2.8 V to 45 V) while still maintaining excellent DC characteristics. The CS8182 is protected from reverse battery, short circuit and thermal runaway conditions. The device also can withstand 45 V load dump transients and −50 V reverse polarity input voltage transients. This makes it suitable for use in automotive environments. The VREF/ENABLE lead serves two purposes. It is used to provide the input voltage as a reference for the output and it also can be pulled low to place the device in sleep mode where it nominally draws less than 30μA from the supply.

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The CS8129 is a 5.0V precision linear regulator capable of sourcing 750mA. The RESET threshold voltage has been lowered to 4.2V so that the regulator can be used with 4.0V microprocessors. The lower RESET threshold also permits operation under low battery conditions (5.5V plus a diode). RESET's delay time is externally programmed using a discrete RC network. During powerup, or when the output goes out of regulation, RESET remains in the low state for the duration of the delay. This function is independent of the input voltage and will function correctly as long as the output voltage remains at or above 1.0V. Hysteresis is included in the Delay and the RESET comparators to improve noise immunity. A latching discharge circuit is used to discharge the delay capacitor when it is triggered by a brief fault condition. The regulator is protected against a variety of fault conditions: i.e. reverse battery, overvoltage, short circuit and thermal runaway conditions. The regulator is protected against voltage transients ranging from -50V to +40V. Short circuit current is limited to 1.2A (typ). The CS8129 is packaged in a 5 lead TO-220 and a 16 lead surface mount package.

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The document introduces the characteristics of the MBR120ESFT1/D Schottky power diode.

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The document introduces a plastic SOD-123 package with a large area metal-to-silicon power diode using the Schottky Barrier principle. The product is ideally suited for low voltage, high frequency rectification, free wheeling, and polarity protection diodes, especially in surface mount applications where compact size and weight are critical to the system. The product features low forward voltage, 125°C operating junction temperature, excellent ESD ratings, and other characteristics.

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MBR120VLSFT1/D is a Schottky power rectifier using the Schottky Barrier principle with a large area metal-to-silicon power diode.

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This datasheet introduces the features and characteristics of MBR0540T1/D Surface Mount Schottky Power Rectifier SOD−123 Power Surface Mount Package, including application scenarios, pin definitions, and package dimensions.

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The NCP1402 series are monolithic micropower step-up DC to DC converters that are specially designed for powering portable equipment from one or two cell battery packs. These devices are designed to start-up with a cell voltage of 0.8 V and operate down to less than 0.3 V. With only three external components, this series allow a simple means to implement highly efficient converters that are capable of up to 200 mA of output current at Vin = 2.0 V, VOUT = 3.0 V. Each device consists of an on-chip PFM (Pulse Frequency Modulation) oscillator, PFM controller, PFM comparator, soft-start, voltage reference, feedback resistors, driver, and power MOSFET switch with current limit protection. Additionally, a chip enable feature is provided to power down the converter for extended battery life. The NCP1402 device series are available in the Thin SOT-23-5 package with five standard regulated output voltages. Additional voltages that range from 1.8 V to 5.0 V in 100 mV steps can be manufactured.

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This is a 5.0V precision micropower voltage regulator with 150mA output current capability. The output voltage accuracy is ±2.0% with a maximum dropout voltage of 0.6V at 150mA. It can output 150mA current and is especially suitable for any battery-powered microprocessor equipment. Microprocessor control logic includes an active RESET (with DELAY) and a FLAG monitor that can be used to provide an early warning signal to the microprocessor of a potential impending RESET signal. The use of the FLAG monitor allows the microprocessor to finish any signal processing before the RESET shuts the microprocessor down. The active RESET circuit operates correctly at an output voltage as low as 1.0V. The RESET function is activated during the power up sequence or during normal operation if the output voltage drops outside the regulation limits. The reset threshold voltage can be decreased by the connection of an external resistor divider to RADJ lead. The regulator is protected against reverse battery, short circuit, and thermal overload conditions. The device can withstand load dump transients making it suitable for use in automotive environments. The device has also been optimized for EMC conditions.

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RB751V40T1/D is a Schottky barrier diode produced by ON Semiconductor. It features extremely low forward voltage and extremely fast switching speed, making it ideal for high-frequency switching applications, circuit protection and voltage clamping.

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The RB751S40T1 is a fast switching diode designed for high-speed switching applications, circuit protection, and voltage clamping. Its extremely low forward voltage reduces conduction loss. The miniature surface mount package is excellent for handheld and portable applications where space is limited.

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BC368/D is the datasheet for BC368 (NPN) and BC369 (PNP) amplifier transistors.

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BC337, BC337−16, BC337−25, BC337−40, BC338−25 are NPN Silicon Amplifier Transistors, Pb−Free Packages are Available

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This data sheet provides the characteristics of BC337, BC337-16, BC337-25, BC337-40, BC338-25.

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BC327 is a PNP type silicon transistor produced by ON Semiconductor

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NTB90N02/D NTB90N02, NTP90N02 is N−Channel power MOSFET with a maximum voltage of 24 V and a maximum current of 90 A. The product is suitable for low voltage, high speed switching applications such as power supplies, converters, motor controls and bridge circuits.

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NTB90N02 and NTP90N02 are power MOSFETs designed for low voltage, high speed switching applications in power supplies, converters, power motor controls, and bridge circuits.

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NTP85N03, NTB85N03 is an N-channel MOSFET with a rated voltage of 28 V and a rated current of 85 A, designed for low voltage, high speed switching applications such as power supplies, converters and motor controllers and bridge circuits.

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This document describes the features and characteristics of the NTP75N06 and NTB75N06 power MOSFETs. They are designed for low voltage, high speed switching applications in power supplies, converters, power motor controls, and bridge circuits.

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