Industrial Manuals

The document provides performance data, capacity, and features of TRSE 32 single-stage medium vacuum pumps. The pump is a single-stage rotating pump with externally located bearings grease lubricated. It features a mechanical seal - double mechanical seal. Options include bareshaft pump, coupled to electric motor on baseplate, and monoblock with electric motor. Additional options such as flanged air-liquid separator tank, non-return valve, ejector, vacuum relief valve, flow valve, vacuum gauges, pressure gauges, and compound gauges are available upon request. Water sealed and oil sealed systems are also available. For more detailed information, please contact our Sales Office.

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This manual provides instructions for the installation, operation, and maintenance of Travaini pumps.

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The SignaLink USB combines the legendary performance of our SL-1+ with a state of the art built-in low-noise sound card. It offers optimal performance, simplified installation and operation, and the ability to run multiple interfaces on one computer at the same time.

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RF3V49092, RF3S49092SM are 20A/10A, 12V logic level complementary power MOSFETs manufactured using an advanced MegaFET process. They offer outstanding performance and are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and low voltage bus switches. These MOSFETs achieve full rated conduction at a gate bias in the 3V to 5V range, enabling true on-off power control directly from logic level (5V) integrated circuits.

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This datasheet provides information on Numonyx™ Wireless Flash Memory (W18/W30 SCSP) 32WQ and 64WQ family products, including flash density, async PSRAM density, voltage, packaging, PSRAM performance, SRAM performance, quality and reliability, flash performance, flash architecture, etc.

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IRF3808S / IRF3808L is a high-performance MOSFET designed by IRF for automotive applications, with extremely low on-resistance, high reliability and fast switching characteristics

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The RF3805 is a high-performance dual-stage amplifier specifically designed for wireless infrastructure applications. It achieves high output power over a broad frequency range using a reliable GaAs HBT fabrication process. The amplifier also provides excellent efficiency and thermal stability through the use of a thermally-enhanced surface-mount AlN package. Ease of integration is accomplished through the incorporation of an optimized evaluation board design.

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The RF3805 is a high-performance dual-stage amplifier specifically designed for wireless infrastructure applications. Using a highly reliable GaAs HBT fabrication process, this amplifier achieves high output power over a broad frequency range. The RF3805 amplifier also provides excellent efficiency and thermal stability through the use of a thermally-enhanced surface-mount AlN package. Ease of integration is accomplished through the incorporation of an optimized evaluation board design provided to achieve proper 50Ω operation.

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RF3800 GaAs HBT Pre-Driver Amplifier is a pre-driver for 450MHz base station amplifiers, with 6W output power, high linearity, 45% power added efficiency, thermally enhanced packaging, broadband platform design approach.

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The product is a 450MHz base station pre-amplifier, using GaAs HBT process, with a 6W output power, 45% power-added efficiency, good linearity and thermal stability.

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The RF3404 is a fully-functional, integrated dual-band downconverter module for tri-mode CDMA applications. The module, which uses SiGe technology, features two complete RF downconverters with low noise amplifiers, RF SAW filters, TX LO buffers, and RF matching for PCS and cellular band frequencies. Additionally, a divide-by-2 prescaler is integrated to allow the use of a single-band VCO. Multiple gain control options are available to conserve current and meet IS-98B specifications. The mixer design allows for a common IF filter for CDMA cellular and PCS operation, and a second output for the FM output. IF matching is external to the module.

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This document describes the features and characteristics of the IRF340, an N-Channel power MOSFET. It has a rating of 10A, 400V, 0.550Ω on-state resistance, high single pulse avalanche energy rating, fast switching speeds, high input impedance, and is suitable for switching regulators, motor drivers, relay drivers, and other applications requiring high speed and low gate drive power.

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RF3397 is a low-cost, general purpose RF amplifier IC from RF Micro Devices. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cas- cadable 50Ω gain block. Applications include IF and RF amplification in wireless voice and data communication products operating in frequency bands up to 6000MHz.

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The RF3394 is a general purpose, low-cost RF amplifier IC manufactured by RF Micro Devices on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process. It is designed for use as an easily-cas- cadable 50Ω gain block and is widely used in basestation, broadband, low-noise gain blocks, IF or RF buffer amplifiers, driver stage for power amplifiers, final PA for low-power applications and high reliability applications.

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The RF3377 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplification in wireless voice and data communication products operating in frequency bands up to 6000MHz. The device is self-contained with 50Ω input and output impedances and requires only two external DC-biasing elements to operate as specified.

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The RF3376 is a general purpose, low-cost RF amplifier IC from RF Micro Devices, Inc. It is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) pro- cess, and has been designed for use as an easily-cas- cadable 50Ω gain block. The device operates in frequency bands up to 6000MHz and features 22dB small signal gain, +2.0dB noise figure, and +11dBm output P1dB.

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The RF3375 is a general purpose, low-cost RF amplifier IC from RF Micro Devices. It is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process and designed for use as an easily-cascadable 50Ω gain block. It has a operating frequency range of DC to 6000MHz, 13.2dB small signal gain, +28dBm output IP3 and +16.0dBm output P1dB.

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This document is the RF3330 datasheet. It introduces the characteristics of the product, including application scenarios, functions, and electrical performance.

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