Samsung SDRAM 16Mb H-die(x16) Data Sheet
The K4S161622H is a 16,777,216-bit synchronous high data rate dynamic random access memory organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/ O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latency
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SAMSUNG K7N163601A K7N161801A 512Kx36 1Mx18 Pipelined NtRAM
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SAMSUNG DEFLECTION PROCESSOR FOR MULTISYNC MONITORS KB2147
The KB2147 is a monolithic integrated circuit designed to control all the functions related to the horizontal and vertical deflection in multimodes or multisync monitors. It features self-adaptive frequency range, X-ray protection input, adjustable duty-cycle, wide range DC controlled H-position, etc.
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SAMSUNG ELECTRONICS MultiMediaCard Specification
This document is an introduction to the MultiMediaCardTM specification, detailing the version history and changes of the product. The specification mainly covers the technical specifications and features of the MultiMediaCardTM, including command response timing, SPI bus timing, power consumption, memory array structure, etc.
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SAMSUNG KA9201 LINEAR INTEGRATED CIRCUIT
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SAMSUNG M470L1714BT0 DATA SHEET
200pin DDR SDRAM SODIMM M470L1714BT0 is a high density memory module based on 128Mb DDR SDRAM first gen.
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samsung KM681002C/CL KM681002CI/CLI handbook
This document is a specification sheet for the 128Kx8 bit high-speed CMOS static RAM produced by SAMSUNG Electronics. This RAM is suitable for commercial and industrial temperature ranges. It features fast access time, low power dissipation, single 5.0V±10% power supply, TTL compatible inputs and outputs, etc.
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SAMSUNG KA2287 handbook
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samsung 512Mb C-die DDR2 SDRAM handbook
This document introduces the key features of the 512Mb C-die DDR2 SDRAM product, including speed, voltage, package pinout and addressing method.
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SAMSUNG 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA K4M51323LE - M(E)C/L/F February 2004 Mobile-SDRAM handbook
K4M51323LE is a synchronous high data rate Dynamic RAM with features such as four banks operation, CAS latency, burst length, burst type, etc.
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samsung ES80/ES81 digital camera user manual
This user manual provides detailed usage instructions for your camera, including basic functions, extended functions, shooting options, playback/editing, settings, appendices, and index.
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samsung PL120/PL121 User Manual
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Samsung KMM5364005CSW/CSWG Data Sheet
KMM5364005CSW/CSWG 4Byte 4Mx36 SIMM is a 4Mx36bits Dynamic RAM high density memory module produced by Samsung. It consists of two CMOS 4Mx16bits and one CMOS Quad CAS 4Mx4bits DRAMs packaged in TSOP, mounted on a 72-pin glass epoxy substrate. Each DRAM has a 0.1 or 0.22uF decoupling capacitor mounted on the printed circuit board. The KMM5364005C is a Single In-line Memory Module with edge connections and is intended for mounting into 72 pin edge connector sockets.
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samsung KMM5364003BSW/BSWG handbook
KMM5364003BSW/BSWG is a 4Mx36bits dynamic random access memory (DRAM) high density memory module manufactured by Samsung. The module consists of two CMOS 4Mx16bits and one CMOS Quad CAS 4Mx4bits DRAMs in TSOP packages mounted on a 72-pin glass-epoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The KMM5364003B is a Single In-line Memory Module with edge connections and is intended for mounting into 72 pin edge connector sockets.
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samsung KMM53216000BK/BKG Manual
This document describes the features and characteristics of the Samsung KMM53216000B high density memory module, including 16Mx32bits dynamic RAM, fast page mode operation, CAS-before-RAS and hidden refresh capability, etc.
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samsung KM681002A KM681002AI handbook
This is a preliminary version data sheet for KM681002A and KM681002AI CMOS SRAM. The product is a 128Kx8 high-speed static RAM, operating at 5V, with a revolutionary pin-out. It can operate within the commercial and industrial temperature range.
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Samsung S3C7524/C7528/P7528/C7534/C7538/P7538 Data Sheet
The S3C7524/C7528/P7528/C7534/C7538/P7538 is a high-performance single-chip CMOS microcontroller designed using SAM 47 (Samsung Arrangeable Microcontrollers). It features low energy consumption and low operating voltage, and can be configured with either 4K or 8K bytes of ROM.
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Samsung PC133/PC100 SODIMM Data Sheet
M464S3254DTS is a 32M bit x 64 synchronous dynamic RAM high density memory module manufactured by Samsung. It consists of eight CMOS 16M x 16 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 144-pin glass-epoxy substrate. Three 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM. The M464S3254DTS is a Small Outline Dual In-line Memory Module and is intended for mounting into 144-pin edge connector sock- ets. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable latencies allows the same device to be useful for a variety of high bandwidth, high performance memory system applications.
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Samsung S1T8825B Data Sheet
The S1T8825B is a high-performance dual frequency synthesizer with two integrated high-frequency pre-scalers for RF operation up to 1.3 GHz. It is composed of modulus pre-scalers providing 64 and 66, no dead-zone PFD, selectable charge pump current, selectable power down mode circuits, lock detector output, and loop filter’s time constant switch. It is fabricated using the ASP5HB Bi-CMOS process and is available in a 16-TSSOP package. Serial data is transferred into the S1T8825B via a three-wire interface (CK, DATA, EN).
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Samsung KM62256C Family Data Sheet
The KM62256C family is a low-power CMOS static random access memory (SRAM) fabricated by SAMSUNG using 0.7-micrometer CMOS technology. The family supports a variety of operating temperature ranges and has a variety of package types for user flexibility in system design. The family also supports low data retention voltage for battery back-up operation with low data retention current.
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