The S5T3170 is a complete Dual Tone Multiple Frequency (DTMF) receiver that is fabricated by low power CMOS and the Switched- Capacitor Filter technology. This LSI consists of band split filters, which separates counting section which verifies the frequency and duration of the received tones before passing the corresponding code to the output bus. It decodes all 16 DTMF tone pairs into a 4bits digital code. The externally required components are minimized by on chip provision of a differential input AMP, clock oscillator and latched three state interface. The on chip clock generator requires only a low cost TV crystal as an external component.

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This PDF file introduces the Rohde & Schwarz PQA100 and PQA200 series of spectrum analyzers, which are high-performance instruments that can be used for a variety of applications, including RF testing, signal analysis, power quality analysis and telecommunications testing. The file provides detailed information on the features and characteristics of these products, including frequency range, sampling rate, resolution and dynamic range.

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Samsung MultiMediaCard Specification

This document is a specification of MultiMediaCard. It mainly introduces the function, feature, characteristic, ordering information, etc. of MultiMediaCard.

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Samsung KM6164000B Family Data Sheet

This datasheet provides detailed information on the KM6164000BL-L 256Kx16 bit Low Power CMOS Static RAM product, including the product's package type, pin arrangement, pin function, interface, power supply, power supply voltage, operating temperature range, storage temperature range, data retention time, data retention voltage, static current, dynamic current, power consumption, and corresponding timing.

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Samsung K7N803601B K7N801801B Data Sheet

256Kx36 & 512Kx18 Pipelined NtRAMTM is a memory chip produced by Samsung Electronics, South Korea. It is suitable for 3.3V voltage and has a maximum frequency of 167MHz.

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Samsung K4S643232F Data Sheet

K4S643232F is a 64M x 32bit SDRAM produced by Samsung, supporting 4 512K x 32bit memory groups, operating voltage is 3.3V.

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Samsung K4S643232E Data Sheet

This document describes a CMOS SDRAM product called K4S643232E, which has high data transfer rate, synchronous design, programmable burst length and latency, and is suitable for high bandwidth, high performance memory system applications.

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Samsung 256MB 512MB 1GB Registered DIMM Data Sheet

The document provides specifications and features of DDR SDRAM 256MB, 512MB, and 1GB Registered DIMM. These modules are based on 256Mb E-die (x4, x8) technology and feature 72-bit ECC and 1,700 / 1,200mil height. The ordering information includes part numbers and specifications of modules with different capacities and organizations.

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Samsung M366S2953MTS SDRAM DIMM Data Sheet

The Samsung M366S2953MTS is a 64M bit x 64 Synchronous Dynamic RAM high density memory module. It has a synchronous design that allows precise cycle control. It can be used for a variety of high bandwidth, high performance memory system applications.

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Samsung S1M8831A/33 Data Sheet

The S1M8831A/33 is a dual synthesizer supporting RF and IF frequencies up to 1.2GHz RF and 520MHz IF. It uses the ∑-∆ fractional-N technology to solve the fractional spurs problem in other fractional-N synthesizers based on charge pump compensation. The device also supports accurate programming of the PCS/CDMA channel frequency in 10kHz steps.

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samsung OneNAND256(KFG5616x1A-xxB6) FLASH MEMORY handbook

OneNAND256(KFG5616x1A-xxB6) FLASH MEMORY is a product of Samsung Electronics Company. It contains information about density, model, power, temperature, package.

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Samsung 128MB 256MB SODIMM Data Sheet

M470L1624FT0-C(L)B3/A2/B0 is a 128MB DDR SDRAM SODIMM memory module from Samsung. It uses 256Mb F-die chips, supports 64-bit and 72-bit data width, and has a frequency of 133MHz and 166MHz with timing of 2.5-3-3 and 2.5-3-3.

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Samsung M366S1723DTS Data Sheet

The Samsung M366S1723DTS PC133/PC100 Unbuffered DIMM is a 16M bit x 64 Synchronous Dynamic RAM high density memory module.

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SAMSUNG Electronics KS88C4616/C4632/P4632 handbook

The document introduces the features and characteristics of the KS88C4616/C4632 series of single-chip 8-bit CMOS microcontrollers launched by Samsung Electronics Co., Ltd. These microcontrollers have a fast and efficient CPU, a variety of integrated peripherals, and programmable ROM.

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SAMSUNG KM416C4000C KM416C4100C CMOS DRAM handbook

KM416C4000C and KM416C4100C are two CMOS DRAM chips. They are both 4Mx16 bit Fast Page Mode DRAMs and have high speed random access capability to memory cells within the same row. Their refresh cycles (4K Ref. or 8K Ref.) and access times (-5 or -6) are optional, and they all have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. These chips are manufactured using Samsung's advanced CMOS process to realize high bandwidth, low power consumption and high reliability.

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SAMSUNG K4S641633H - R(B)E/N/G/C/L/F February 2004 Mobile-SDRAM handbook

K4S641633H is a mobile memory chip produced by Samsung. It uses synchronous design to provide precise clock control and supports a wide range of operating frequencies, programmable burst lengths and programmable latencies. It can be used for various high bandwidth and high performance memory system applications.

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SAMSUNG Electronics DDR SDRAM Specification Version 1.0 handbook(1)

This document is a version history record of the DDR SDRAM DDR SDRAM specification, describing the different versions and revisions of the product.

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KM68B261A is a 262,144-bit high-speed Static Random Access Memory organized as 32,768 words by 8 bits. It features fast access time, low power dissipation standby, single 5V power supply, and is designed for high-density high-speed system applications.

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Samsung K6E0808C1E-C/E-L K6E0808C1E-I/E-P Data Sheet

This is a 32Kx8 bit high-performance CMOS static RAM, operating voltage is 5V, suitable for commercial and industrial temperature range.

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