philips PBSS4350T 50 V low VCEsat NPN transistor handbook

Update: 28 September, 2023

This document describes the features and characteristics of the PBSS4350T 50V low VCEsat NPN transistor, including low collector-emitter saturation voltage VCEsat and corresponding low equivalent on-resistance RCEsat, high collector current capability, high collector current gain, and improved efficiency due to reduced heat generation. The transistor is suitable for power management applications, low and medium power DC/DC converters, supply line switching, battery chargers, and linear voltage regulation with low voltage drop-out (LDO).

Brand: Philips

File format: PDF

Size: 74 KB

MD5 Checksum: 0D9EEF545EEE13430300F7C42272E121

Publication date: 03 July, 2012

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