samsung SDRAM 256Mb E-die (x4 x8 x16) handbook
Update: 30 September, 2023
The K4S560432E / K4S560832E / K4S561632E is a 268,435,456 bit synchronous high data rate Dynamic RAM organized as 4 x 16,785,216 / 4 x 8,392,608 / 4 x 4,196,304 words by 4bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth applications.
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MD5 Checksum: 46DB7B9CF90D1406551E7CA03FF9F671
Publication date: 01 April, 2012
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samsung SDRAM 256Mb E-die (x4 x8 x16) handbook PDF