Update: 01 October, 2023
The K4S641633H is a synchronous high data rate dynamic random access memory (SDRAM) from Samsung that is organized as 4 x 1,048,576 words by 16 bits. The device is fabricated with Samsung's high-performance CMOS technology and features a synchronous design that allows precise cycle control with the use of system clock. The device also supports a wide range of operating frequencies, programmable burst lengths, and programmable latencies, making it suitable for a variety of high-bandwidth and high-performance memory system applications. The K4S641633H is available in commercial temperature (-25°C to 70°C) and extended temperature (-25°C to 85°C) versions. The device is packaged in a 54-ball FBGA with 0.8mm ball pitch and is available in both leaded (-RXXX) and lead-free (-BXXX) versions.
File format: PDF
Size: -
MD5 Checksum: A1D679089C09058ACB6EE62717434259
Publication date: 01 April, 2012
Downloads: -
PDF Link: samsung K4S641633H - R(B)E/N/G/C/L/F Manual(1) PDF