Update: 30 September, 2023
The K4S56163PF is a 268,435,456-bit synchronous high-data-rate dynamic random-access memory organized as 4 x 4,196,304 words by 16 bits, fabricated with Samsung's high-performance CMOS technology. Precise cycle control is allowed with the use of the system clock and I/O transactions are possible on every clock cycle due to the synchronous design. The same device can be used in a variety of high-bandwidth and high-performance memory system applications due to the range of operating frequencies, programmable burst lengths, and programmable latencies.
File format: PDF
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MD5 Checksum: 5FE6FBAEA9874413D43B89502FA82BC9
Publication date: 01 April, 2012
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PDF Link: samsung K4S56163PF - R(B)G/F Manual(1) PDF