Panasonic Manuals

This document describes the features and characteristics of the 2SK0620 (2SK620) Silicon N-Channel MOS FET, including high-speed switching and mini-type package.

2SK0656 (2SK656) is a N-channel MOSFET transistor produced by Toshiba. Its features are high switching speed, low drive current and high electrostatic breakdown voltage.

This document describes the features and characteristics of the 2SK0657 (2SK657) Silicon N-Channel MOS FET, including high-speed switching and easy installation and fixing.

2SK0662 is a N-channel silicon junction field effect transistor produced by Toshiba. It is mainly used for low-frequency amplification and has the characteristics of high mutual conductance and low noise.

The 2SK0664 (2SK664) is a high performance silicon N-channel MOSFET for switching applications. This device features high switching speed and S-mini type package for downsizing of the sets and automatic insertion through the tape/magazine packing.

2SK0665(2SK665) is a high performance small signal N-channel MOSFET produced by Fujistu. It features high switching speed, high input impedance and high electrostatic breakdown voltage. This datasheet provides detailed information on the characteristics of this device, for reference by design engineers.

2SK1103 is a N-channel silicon junction field effect transistor manufactured by Toshiba Corporation. Its features are low on-resistance and low noise characteristics.

2SK1104 is a N-channel junction field-effect transistor produced by Toshiba. It has low on-resistance and low-noise characteristics

This document describes the features and characteristics of a Silicon MOS FETs (Small Signal) product, including high-speed switching, wide frequency band, and built-in gate protection-diode.

2SK123 is an N-channel junction FET produced by Toshiba Corporation. It is mainly used for low-frequency impedance conversion and capacitor microphone

This document describes the features and characteristics of 2SA0683 and 2SA0684, which are silicon PNP epitaxial planar transistors suitable for low-frequency power amplification and driver amplification. They are complementary to 2SC1383 and 2SC1384.

2SA0719, 2SA0720 are NPN type low frequency power amplifier and driver amplifier produced by Mitsubishi Electric, Japan. Their package type is TO-92 and they are complementary pairs with 2SC1317, 2SC1318

This document describes the features of the 2SA0720A (2SA720A) silicon PNP epitaxial planar transistor, which is suitable for the driver stage of a low-frequency amplifier. The transistor has a high collector-emitter voltage and is optimal for the driver stage of a low-frequency and 25W to 30W output amplifier.

2SA0777 is a silicon PNP type transistor manufactured by Mitsubishi Electric. It features high collector-emitter voltage (base open) VCEO and is optimized for the driver stage of a low-frequency and 25 W to 30 W output amplifier.

2SA0794 (2SA794), 2SA0794A (2SA794A) are silicon PNP epitaxial planar type transistors from Toshiba. They are suitable for low-frequency output driver circuits. The devices have high collector-emitter open circuit voltage (VCEO), which makes them suitable for low-frequency 40W to 100W output power amplifier driver stages. 2SA0794A has a VCEO of -120V, which is 20V higher than that of 2SA0794. 2SA0794, 2SA0794A are packaged in TO-126B, which does not require an insulation plate to be installed on the heat sink.