ADVANCED Manuals

APT15D60B is a bidirectional Schottky diode produced by APT company. It has ultrafast recovery time, soft recovery characteristics, low forward voltage, high blocking voltage and low leakage current. It is used in switchmode power supply, inverter, motor controller, converter, uninterruptible power supply (UPS), induction heating and high speed rectifier.

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APT15D40C is an ultrafast soft recovery diode of APEC. The product features ultrafast recovery times, soft recovery characteristics, hermetic TO-254 package, low forward voltage, high blocking voltage and low leakage current.

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The document describes the characteristics and test conditions of a 400V dual 15A diode, including the maximum DC reverse voltage, maximum peak repetitive reverse voltage, maximum working peak reverse voltage, and maximum average forward current. Additionally, it provides information on the maximum power density and operating temperature range of the product.

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The document describes the features and characteristics of the APT15D30K 300V ultrafast soft recovery rectifier diode, including maximum DC reverse voltage, maximum peak repetitive reverse voltage, maximum working peak reverse voltage, maximum average forward current, RMS forward current, non-repetitive forward surge current, etc.

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APT15D30C is an ultrafast soft recovery diode for applications such as switchmode power supplies, inverters, etc. It features ultrafast recovery times, soft recovery characteristics, low power consumption, high reliability and high density.

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This product is a 300V, 2x15A Schottky Diode, with low losses, low noise switching, higher reliability systems and higher system power density.

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The maximum reverse voltage of the APT15D100K 1000V 15A Schottky diode is 1000V, the maximum average forward current is 15A, and the maximum reverse leakage current is 10uA. The diode is packaged in TO-220 and features ultrafast recovery times, soft recovery characteristics, low forward voltage, high blocking voltage, and low leakage current. It is suitable for anti-parallel diodes, switch-mode power supplies, inverters, free wheeling diodes, motor controllers, converters, snubber diodes, uninterruptible power supplies (UPS), induction heating, and high speed inverters.

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This document is the datasheet of APT15D100BHB 1000V 2x15A, which mainly introduces the characteristics and features of the product, including maximum dc reverse voltage, maximum peak repetitive reverse voltage, maximum working peak reverse voltage, maximum average forward current, rms forward current, non-repetitive forward surge current, working and storage temperature range, lead temperature, etc.

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The document describes the characteristics and test conditions of the APT15D100BCT 1000V 2x15A diode, including the maximum DC reverse voltage, maximum peak repetitive reverse voltage, maximum working peak reverse voltage, maximum average forward current, RMS forward current, and non-repetitive forward surge current. It also provides information on static electrical characteristics and product applications.

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The document provides performance curves and maximum ratings for the product with model APT150GN120J. This product is an IGBT device with low VCE(ON) and is ideal for low frequency applications.

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This document describes the features and characteristics of the preliminary version of GC E TO-220 G C E, including maximum operating voltage, minimum and maximum operating temperature, and other parameters.

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APT12GT60BR 600V 25A is a new generation of high voltage power IGBTs, using Non-Punch Through Technology.

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This is a APT12080LVR model product, with a maximum working voltage of 1200V, a maximum continuous current of 16A and a maximum on-resistance of 0.800 ohms.

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This is a SOT-227-packaged GDS® ISOTOP® high-voltage Schottky diode with a maximum reverse voltage of 1,500V and a maximum forward current of 10A.

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This document is the technical data sheet of APT12067JLL, mainly introduces its electrostatic characteristics, maximum ratings, static electrical characteristics and other parameters

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APT12067JFLL is a high voltage N-Channel enhancement mode power MOSFET product from APT. It has low conduction and switching losses, and both RDS(ON) and Qg are very low.

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The document describes the features and characteristics of a specific model of product, including parameters such as drain-source breakdown voltage, on-state drain current, drain-source on-state resistance, zero gate voltage drain current, etc.

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This document provides technical information about the APT12060 series products, including maximum ratings and static electrical characteristics. APT12060 is a power MOSFET with a rated voltage of 1200V, a rated current of 20A, and an on-state resistance of 0.600Ω.

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The document describes the features and characteristics of a product named APT12057JLL, including important parameters such as drain-source breakdown voltage, on-state drain current, drain-source on-state resistance, zero gate voltage drain current, etc.

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