RF Manuals

The RF3805 is a high-performance dual-stage amplifier specifically designed for wireless infrastructure applications. It achieves high output power over a broad frequency range using a reliable GaAs HBT fabrication process. The amplifier also provides excellent efficiency and thermal stability through the use of a thermally-enhanced surface-mount AlN package. Ease of integration is accomplished through the incorporation of an optimized evaluation board design.

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The RF3805 is a high-performance dual-stage amplifier specifically designed for wireless infrastructure applications. Using a highly reliable GaAs HBT fabrication process, this amplifier achieves high output power over a broad frequency range. The RF3805 amplifier also provides excellent efficiency and thermal stability through the use of a thermally-enhanced surface-mount AlN package. Ease of integration is accomplished through the incorporation of an optimized evaluation board design provided to achieve proper 50Ω operation.

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RF3800 GaAs HBT Pre-Driver Amplifier is a pre-driver for 450MHz base station amplifiers, with 6W output power, high linearity, 45% power added efficiency, thermally enhanced packaging, broadband platform design approach.

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The product is a 450MHz base station pre-amplifier, using GaAs HBT process, with a 6W output power, 45% power-added efficiency, good linearity and thermal stability.

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The RF3404 is a fully-functional, integrated dual-band downconverter module for tri-mode CDMA applications. The module, which uses SiGe technology, features two complete RF downconverters with low noise amplifiers, RF SAW filters, TX LO buffers, and RF matching for PCS and cellular band frequencies. Additionally, a divide-by-2 prescaler is integrated to allow the use of a single-band VCO. Multiple gain control options are available to conserve current and meet IS-98B specifications. The mixer design allows for a common IF filter for CDMA cellular and PCS operation, and a second output for the FM output. IF matching is external to the module.

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The RF3394 is a general purpose, low-cost RF amplifier IC manufactured by RF Micro Devices on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process. It is designed for use as an easily-cas- cadable 50Ω gain block and is widely used in basestation, broadband, low-noise gain blocks, IF or RF buffer amplifiers, driver stage for power amplifiers, final PA for low-power applications and high reliability applications.

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The RF3376 is a general purpose, low-cost RF amplifier IC from RF Micro Devices, Inc. It is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) pro- cess, and has been designed for use as an easily-cas- cadable 50Ω gain block. The device operates in frequency bands up to 6000MHz and features 22dB small signal gain, +2.0dB noise figure, and +11dBm output P1dB.

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The RF3375 is a general purpose, low-cost RF amplifier IC from RF Micro Devices. It is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process and designed for use as an easily-cascadable 50Ω gain block. It has a operating frequency range of DC to 6000MHz, 13.2dB small signal gain, +28dBm output IP3 and +16.0dBm output P1dB.

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This document is the RF3330 datasheet. It introduces the characteristics of the product, including application scenarios, functions, and electrical performance.

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The RF3322 is a variable gain amplifier for use in CATV reverse path (upstream) applications. It is DOCSIS-compliant for use in cable modems. The gain control covers a 58dB range and is serially programmable via three-wire digital bus for compatibility with standard baseband chipsets. Amplifier shutdown and transmit disable modes are software- and hardware-controlled. The device is placed into sleep mode via the serial control bus. The device operates over the frequency band of 5MHz to 65MHz for use in current U.S. and European systems. The amplifier delivers up to 60dBmV at the output of the balun. Gain is controllable in accurate 1dB steps. The device is provided in an industry-standard QSOP-20 package.

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The RF3321 is a variable gain amplifier for use in CATV reverse path (upstream) applications. It is designed to be DOCSIS-compliant for use in cable modems. The gain control covers a 56dB range and is serially programmable via three-wire digital bus for compatibility with standard baseband chipsets. Amplifier shutdown and transmit disable modes are hardware-controlled. The device operates over the frequency band of 5MHz to 65MHz for use in current U.S. and European systems. The amplifier delivers up to +69dBmV at the output of the balun. Gain is controllable in accurate 1dB steps. The device is provided in a thermally enhanced, exposed die flag package.

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The RF3320 is a variable gain amplifier for use in CATV reverse path (upstream) applications. It is DOCSIS-com- pliant for use in cable modems. The gain control covers a 58dB range and is serially programmable via three-wire digital bus for compatibility with standard baseband chipsets. Amplifier shutdown and transmit disable modes are software- and hardware-controlled. The device is placed into software-shutdown mode via the serial control bus. The device operates over the frequency band of 5MHz to 65MHz for use in current U.S. and European systems. The amplifier delivers up to 60dBmV at the out- put of the balun. Gain is controllable in accurate 1dB steps. The device is provided in a thermally enhanced, exposed die flag package.

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The RF3315 is a high-efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier packaged in a low-cost surface-mount package. This amplifier is ideal for use in applications requiring high-linearity and low noise figure over the 300MHz to 3GHz frequency range. The RF3315 operates from a single 5V power supply.

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The RF3166 is a high-power, high-efficiency power ampli- fier module with integrated power control that provides over 50dB of control range. The device is a self-contained 6mmx6mm module with 50Ω input and output terminals. The device is designed for use as the final RF amplifier in GSM850, EGSM900, DCS and PCS handheld digital cel- lular equipment and other applications in the 824MHz to 849MHz, 880MHz to 915MHz, 1710MHz to 1785MHz and 1850MHz to 1910MHz bands.

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The RF3164 3V 1900MHz Linear Power Amplifier Module is a high-power, high-efficiency linear amplifier module specifically designed for 3V handheld systems. The device is manufactured on an advanced third generation GaAs HBT process, and was designed for use as the final RF amplifier in 3V IS-95/CDMA 2000 1X handheld digital cellular equipment, spread-spectrum systems, and other applications in the 1850MHz to 1910MHz band. The RF3164 has a digital control line for low power applications to lower quiescent current. The RF3164 is assembled in at 16-pin, 3mmx3mm, QFN package.

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The RF3163 is a high-power, high-efficiency linear amplifier module specifically designed for 3V handheld systems. The device is manufactured on an advanced third generation GaAs HBT process, and was designed for use as the final RF amplifier in 3V IS-95/CDMA 2000 1X/AMPS handheld digital cellular equipment, spread-spectrum systems, and other applications in the 824MHz to 849MHz band. The RF3163 has a digital control line for low power applications to lower quiescent current. The RF3163 is assembled in a 16-pin, 3mmx3mm, QFN package.

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The RF3163 is a high-power, high-efficiency linear amplifier module specifically designed for 3V handheld sys- tems.

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The RF3160 is a high-power, high-efficiency power amplifier module from RF Micro Devices. It is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process and has been designed for use as the final RF amplifier in GSM/DCS handheld digital cellular equipment and other applications in the 880MHz to 915MHz and 1710MHz to 1785MHz bands.

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