NXP BUK9E3R2-40B TrenchMOS
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
Brand: NXP
File format: PDF
Size: 272 KB
MD5 Checksum: 57C5F28F8A5DF826FC12D2AC7F9C5D26
Publication date: 23 May, 2014
Downloads: -
PDF Link: NXP BUK9E3R2-40B TrenchMOS PDF