ST DB-900-80W handbook

Update: 28 September, 2023

This document describes the features and performance of the DB-900-80W RF power amplifier. The device uses N-channel enhancement-mode lateral MOSFET technology and is suitable for IS-54/-136 and IS-95 base station applications. It has excellent thermal stability, operates in the frequency range of 869-894 MHz, with a maximum output power of 80W and a gain of 13dB. The device also has a 10:1 load VSWR capability and harmonics lower than 30dBc.

Brand: ST

File format: PDF

Size: 318 KB

MD5 Checksum: 00349FCBD417D208C03910E716387875

Publication date: 06 August, 2012

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PDF Link: ST DB-900-80W handbook PDF

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