Infineon IPB08CN10N G IPI08CN10N G IPP08CN10N G Manual

Update: 30 September, 2023

The characteristics of IPB08CN10N G IPI08CN10N G IPP08CN10N G OptiMOS®2 power transistor include N-channel, normal level, excellent gate charge x R DS(on) product (FOM), very low on-resistance R DS(on), 175 °C operating temperature, lead-free lead plating; RoHS compliant, qualified according to JEDEC1) for target application, ideal for high-frequency switching and synchronous rectification.

Brand: INFINEON

File format: PDF

Size: 515 KB

MD5 Checksum: C789A4BE73717125E81C353EE90F3F73

Publication date: 13 July, 2012

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PDF Link: Infineon IPB08CN10N G IPI08CN10N G IPP08CN10N G Manual PDF

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